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Product Detailed Parameters
- Description：20A, 350V, N-CHANNEL IGBT
- Series：*
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The HGTP20N35F3VL is a high-voltage N-channel Power MOSFET manufactured by Harris Corporation. It utilizes OptiMOS technology to achieve low on-resistance and fast switching capabilities. The device features a TO-247 package designed for robust thermal performance in industrial applications. Key electrical parameters include a drain-source voltage of 350V, a continuous drain current of 20A at 25°C, and a maximum power dissipation of 200W. The gate threshold voltage ranges from 2V to 4V, ensuring compatibility with standard logic-level drivers.
Feature Summary
- OptiMOS technology for optimized on-resistance and switching speed
- Robust TO-247 package for efficient heat dissipation
- High voltage capability suitable for demanding power environments
Applications
- Industrial motor control systems
- High-frequency power supplies
- DC-DC converter circuits
Procurement Notes
Verify the manufacturer origin carefully as Harris Corporation's semiconductor assets were acquired. Confirm the specific suffix F3VL corresponds to the intended packaging and tape-and-reel configuration. Request official datasheets to validate RoHS compliance status and ensure the component matches the required pinout and thermal characteristics for your design.
Selection Notes
Select this component when a 350V rating and 20A continuous current are required in a TO-247 form factor. Consider the gate charge and threshold voltage range for driver compatibility. Evaluate thermal resistance values against your heatsinking strategy to ensure operation within the specified junction temperature limits under load conditions.
Part Context
This part belongs to the OptiMOS family of power MOSFETs developed by Harris Semiconductor. These devices are engineered for high-efficiency power conversion. The HGTP series specifically targets applications requiring reliable high-voltage switching with minimized conduction losses.
Replacement Considerations
Check for direct substitutes from Infineon Technologies, which acquired Harris Semiconductor's power products. Verify equivalent specifications such as VDS, ID, RDS(on), and package type before substitution.
