HGTP3N60A4

Overview

The HGTP3N60A4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 3 A at 25°C. The device utilizes a TO-220AB through-hole package with three pins. Key electrical parameters include a typical fall time of 180 ns at TJ = 125°C and a gate-emitter leakage current of 250 nA. The component operates within a temperature range of -55°C to +150°C, designed for high-frequency switching applications such as switch mode power supplies.

Feature Summary

• Combines MOSFET input impedance with bipolar transistor low conduction loss
• Optimized for high-frequency operation in switch mode power supplies
• Features 600V switching Safe Operating Area (SOA) capability

Applications

• High frequency switch mode power supplies
• DC-to-DC converters
• Motor control circuits

Procurement Notes

Verify the manufacturing status and availability directly with Harris Corporation or authorized distributors, as legacy components may have limited supply chains. Confirm RoHS compliance and specific datasheet revisions before integration into new designs. Ensure sourcing channels are authorized to prevent counterfeit parts.

Selection Notes

Select this IGBT for applications requiring moderate current handling up to 3 A with 600 V blocking capability. Consider the thermal management requirements given the TO-220AB package and power dissipation limits. Compare against modern equivalents from onsemi or other manufacturers if long-term supply assurance is critical for the product lifecycle.

Part Context

This component belongs to the Harris Corporation high-voltage switching device family, which integrates MOS gate technology with bipolar characteristics. These devices were engineered to provide low on-state voltage drops that remain stable across operating temperatures, making them suitable for efficient power conversion systems.

Replacement Considerations

Potential substitutes include the HGTG3N60A4D or similar 600V/3A IGBTs from Fairchild Semiconductor or onsemi. Verify pinout compatibility and electrical parameter equivalence, particularly saturation voltage and switching times, before implementing any cross-brand replacement.