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The HGTP3N60B3 is a 600V, 7A N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a maximum power rating of 33.3W and a collector-emitter saturation voltage of 2.1V at a gate voltage of 15V. The component utilizes the Ultra Fast Switching (UFS) technology for optimized performance. It is housed in a through-hole TO-220 package, suitable for high-power applications requiring robust switching capabilities.
Verify the manufacturer part number HGTP3N60B3 against official Harris Corporation documentation to ensure authenticity. Confirm that the component matches the specified UFS N-channel IGBT characteristics and TO-220 package type. Check for any specific handling requirements associated with high-voltage semiconductor devices during procurement and storage.
Select this component for applications requiring a 600V blocking capability and 7A continuous current handling. The UFS technology makes it suitable for high-frequency operations where switching losses are critical. Ensure the thermal management design supports the 33.3W power dissipation rating within the TO-220 package constraints.
This IGBT belongs to the UFS series from Harris Corporation, designed for high-performance switching applications. It complements other components in the same family, such as the HGTG40N60B3, which offers higher current ratings. The series focuses on optimizing switching speed and reducing conduction losses for efficient power conversion.
Direct substitutes may include other 600V, 7A N-channel IGBTs in TO-220 packages from compatible manufacturers. Verify pinout compatibility and electrical parameters before substitution. Consider the HGTG40N60B3 if higher current capacity is required, though it differs significantly in specifications.