SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The HGTP3N60B3R4724 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a 600V collector-emitter voltage rating and a continuous collector current of 7A. The device utilizes the UFS (Ultra Fast Switching) series technology, designed for efficient power switching applications. It is supplied in a bulk package configuration.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS status and humidity sensitivity level (MSL 3) prior to assembly. Ensure storage conditions comply with specified moisture sensitivity guidelines to maintain device reliability during soldering processes.
Select this component for applications requiring moderate current handling at 600V levels. Consider the UFS technology benefits for switching efficiency. Evaluate thermal management requirements based on the 7A current rating and package type. Compare against alternative IGBTs if higher current or different voltage ratings are needed.
This part belongs to the Harris Corporation UFS series of single IGBTs. It is distinct from variants like the HGTP3N60C3D which may include integrated anti-parallel diodes. The HGTP3N60B3R4724 focuses on standalone transistor functionality within the 600V/7A performance class.
Direct substitutes should be sought within the Harris UFS series or comparable 600V/7A single IGBTs from other manufacturers. Verify pinout compatibility and electrical parameters such as Vce(sat) and switching times before substitution.