HGTP3N60B3R4724

HGTP3N60B3R4724

$0.44
  • Description:7A, 600V, UFS N-CHANNEL IGBT
  • Series:*

SKU:e8414531c464 Category: Brand:

  
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Product Detailed Parameters

  • Description:7A, 600V, UFS N-CHANNEL IGBT
  • Series:*
  • Mfr:Harris Corporation
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:-
  • Power - Max:-
  • Switching Energy:-
  • Input Type:-
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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HGTP3N60B3R4724

Overview

The HGTP3N60B3R4724 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a 600V collector-emitter voltage rating and a continuous collector current of 7A. The device utilizes the UFS (Ultra Fast Switching) series technology, designed for efficient power switching applications. It is supplied in a bulk package configuration.

Feature Summary

  • Single N-channel IGBT structure
  • UFS series ultra-fast switching technology
  • 600V blocking voltage capability
  • 7A continuous collector current

Applications

  • Industrial motor drives
  • Power supply inverters
  • High-frequency switching circuits

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS status and humidity sensitivity level (MSL 3) prior to assembly. Ensure storage conditions comply with specified moisture sensitivity guidelines to maintain device reliability during soldering processes.

Selection Notes

Select this component for applications requiring moderate current handling at 600V levels. Consider the UFS technology benefits for switching efficiency. Evaluate thermal management requirements based on the 7A current rating and package type. Compare against alternative IGBTs if higher current or different voltage ratings are needed.

Part Context

This part belongs to the Harris Corporation UFS series of single IGBTs. It is distinct from variants like the HGTP3N60C3D which may include integrated anti-parallel diodes. The HGTP3N60B3R4724 focuses on standalone transistor functionality within the 600V/7A performance class.

Replacement Considerations

Direct substitutes should be sought within the Harris UFS series or comparable 600V/7A single IGBTs from other manufacturers. Verify pinout compatibility and electrical parameters such as Vce(sat) and switching times before substitution.

HGTP3N60B3R4724HGTP3N60B3R4724
$0.44
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