HGTP3N60C3

Overview

The HGTP3N60C3 is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features an integrated anti-parallel hyperfast recovery diode, combining the high input impedance of a MOSFET with the low conduction loss of a bipolar transistor. The device is rated for a collector current of 3 A and a collector-emitter breakdown voltage of 600 V. It utilizes a TO-220AB flange mount package designed for efficient thermal management in power switching applications.

Feature Summary

• Integrated anti-parallel hyperfast recovery diode for simplified circuit design
• Low on-state conduction loss due to optimized IGBT structure
• High input impedance compatible with standard logic drive levels

Applications

• Motor control circuits requiring moderate current switching
• Power supply topologies utilizing hard-switching techniques
• Inductive load driving applications

Procurement Notes

Verify manufacturer lineage as Harris Corporation assets were acquired by Intersil and subsequently Renesas. Ensure datasheet specifications match the specific production lot requirements. Confirm RoHS compliance status if required for the target assembly process. Validate pinout compatibility with existing PCB footprints before integration.

Selection Notes

Select this component for applications requiring 600V blocking capability with currents up to 3A. The integrated diode eliminates the need for external freewheeling components. Consider thermal resistance limits when designing heat sinking solutions for continuous operation at elevated temperatures.

Part Context

This part belongs to the C3 series of IGBTs from Harris, characterized by fast recovery diodes. It serves as a legacy component in power electronics, often replaced by modern equivalents from Renesas or Fairchild after corporate acquisitions. The TO-220 package remains common for through-hole mounting in industrial equipment.