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Product Detailed Parameters
- Description：IGBT 600V 34A TO-220-3
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：34 A
- Current - Collector Pulsed (Icm)：56 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 7A
- Power - Max：125 W
- Switching Energy：55µJ (on), 60µJ (off)
- Input Type：Standard
- Gate Charge：37 nC
- Td (on/off) @ 25°C：11ns/100ns
- Test Condition：390V, 7A, 25Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The HGTP7N60A4_NL is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 34 A. The device utilizes a TO-220AB through-hole package with three pins. Operating temperatures range from -55 °C to +150 °C. The component integrates an anti-parallel hyperfast diode, optimizing it for high-frequency switch-mode power supply applications where low conduction losses are critical.
Feature Summary
- Integrates an anti-parallel hyperfast diode for combined switching and rectification capabilities
- Optimized for high-frequency operation in switch-mode power supplies
- Provides low on-state conduction loss with temperature-compensating characteristics
Applications
- High frequency switch mode power supplies
- AC and DC motor controls
- General purpose inverters
Procurement Notes
Verify the specific suffix against official documentation, as variations may indicate different packaging or environmental compliance status. Confirm that the requested part matches the exact manufacturer designation to ensure compatibility with existing circuit designs. Cross-reference datasheet revisions to validate electrical parameters before integration into production systems.
Selection Notes
Select this component for circuits requiring 600 V blocking capability and integrated fast recovery diode functionality. Ensure thermal management supports the specified operating temperature range up to 150 °C. Verify gate drive requirements align with the standard MOS input impedance characteristics typical of this IGBT family for optimal switching performance.
Part Context
This device belongs to the SMPS Series of N-channel IGBTs designed specifically for high-frequency applications. It combines the high input impedance of MOSFETs with the low conduction loss of bipolar transistors. The series is engineered to minimize switching noise and improve system efficiency in compact power conversion topologies.
Replacement Considerations
The HGTG7N60A4D and HGT1S7N60A4DS are documented variants within the same functional family. Verify pinout compatibility and package differences when substituting these parts. Ensure thermal dissipation requirements match the target application constraints.
