HGTP7N60B3D

Overview

The HGTP7N60B3D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation, now part of onsemi. It features a TO-247-3 through-hole package with the collector connected to the case for efficient thermal management. The device is rated for a maximum collector-emitter voltage (Vceo) of 600 V and a continuous collector current of 14 A at 25 °C. Key electrical parameters include a collector-emitter saturation voltage of 1.9 V and a gate-emitter voltage range of -20 V to +20 V. The component utilizes silicon technology and is designed for high-speed switching applications.

Feature Summary

• Ultra-fast switching performance optimized for 50-kHz operation
• Competitive loss characteristics comparable to established MOSFETs
• Robust TO-247-3 package design facilitating effective heat dissipation

Applications

• High-frequency power conversion circuits
• Industrial motor drive systems
• Switch-mode power supplies requiring fast switching

Procurement Notes

Verify the manufacturer lineage carefully as Harris Semiconductor assets were acquired by Fairchild, which was subsequently acquired by onsemi. Confirm that the specific ordering suffix corresponds to the exact pinout and electrical specifications required for your design, as legacy documentation may vary across different manufacturing eras.

Selection Notes

Select this component when system requirements demand low switching losses at frequencies around 50 kHz. Ensure the thermal design accommodates the 1.9 V saturation voltage at the target load current. Verify that the 600 V breakdown voltage provides sufficient margin for the specific DC bus voltage and transient spikes present in the application circuit.

Part Context

This IGBT belongs to the HGTP series developed by Harris Semiconductor, known for combining high voltage capability with rapid switching speeds. The B3D suffix typically denotes a specific package variant or revision within the broader HGTP family, distinguishing it from other variants like the HGTP12N60C3D which offers higher current ratings in different packages.

Replacement Considerations

Direct equivalents may be found among onsemi's current IGBT portfolio or legacy Harris/Fairchild stock. Verify pin compatibility and thermal resistance values before substitution. Consider modern alternatives from manufacturers offering similar 600V/14A specifications if legacy supply is constrained.