HGTP7N60C3D

Description：IGBT 600V 14A TO-220-3
Series：-

SKU:e8641cf63e9f Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 14A TO-220-3
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：14 A
Current - Collector Pulsed (Icm)：56 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 7A
Power - Max：60 W
Switching Energy：165µJ (on), 600µJ (off)
Input Type：Standard
Gate Charge：23 nC
Td (on/off) @ 25°C：-
Test Condition：480V, 7A, 50Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220-3
Grade：-
Qualification：-

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HGTP7N60C3D

Overview

The HGTP7N60C3D is a 14A, 600V N-Channel IGBT from the UFS Series, manufactured by onsemi. It features an integrated anti-parallel hyperfast diode and utilizes TO-220AB packaging for through-hole mounting. Key electrical parameters include a collector-emitter saturation voltage of 1.6V at 25°C and a typical fall time of 140ns at 150°C. The device supports a continuous collector current of 14A at 25°C case temperature and offers a short-circuit withstand time of up to 8µs at VGE=10V.

Feature Summary

Combines high input impedance with low on-state conduction loss
Features a hyperfast anti-parallel diode for ultra-fast recovery
Provides robust switching safe operating area capability

Applications

AC and DC motor controls
Power supplies
Drivers for solenoids, relays, and contactors

Procurement Notes

Verify component authenticity against official datasheets due to potential legacy status. Confirm package integrity and lead condition upon receipt. Ensure proper ESD handling protocols are followed during storage and assembly to prevent gate oxide damage. Cross-reference ordering suffixes carefully as they may indicate specific tape-and-reel variants or package differences not inherent to the base part number.

Selection Notes

Select this component for moderate frequency applications requiring low conduction losses. Evaluate thermal management requirements based on the specified power dissipation and thermal resistance values. Consider the short-circuit rating when designing protection circuits. Verify that the gate drive voltage aligns with the threshold and plateau voltage specifications for optimal switching performance.

Part Context

This device belongs to the UFS Series of N-Channel IGBTs developed by Fairchild Semiconductor, now part of onsemi. It represents a developmental type TA49115 for the IGBT and TA49057 for the diode. The series is designed to offer an excellent trade-off between switching performance and low on-state behavior for high voltage switching applications.