HGW40N120FHA

$7.65

Description：1200V 40A IGBT without FRD TO-2
Series：-

SKU:41e9e26135bb Category: Single IGBTs Brand: Watech Electronics

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Product introduction

Product Detailed Parameters

Description：1200V 40A IGBT without FRD TO-2
Series：-
Mfr：Watech Electronics
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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HGW40N120FHA

Overview

The HGW40N120FHA is a discrete IGBT from Watech Electronics belonging to the High-Speed V series. It features a Field Stop architecture designed for high-speed switching applications. The device is rated for a collector-emitter voltage of 1200V and a continuous collector current of 40A. At 25°C, it exhibits turn-on delay time of 68ns and turn-off delay time of 274ns. Switching energy measurements at 600V, 40A, and 10Ohm gate resistance indicate 2.92mJ for turn-on and 2.84mJ for turn-off operations.

Feature Summary

High-speed switching capability with low switching energy losses
Field Stop technology for improved performance
Internal integration of fast and soft recovery anti-parallel FRD

Applications

Communication base stations
Photovoltaic inverters
On-grid inverters
Off-grid solar inverters
MPPT systems

Procurement Notes

Verify the specific ordering suffix and package type against the official Watech Electronics datasheet to ensure compatibility with your design requirements. Confirm that the component matches the High-Speed V series specifications and Field Stop architecture details provided in the manufacturer's documentation before procurement.

Selection Notes

Select this component for applications requiring high blocking voltage and rapid switching speeds. Consider the thermal management needs associated with the specified switching energies and current ratings. Ensure the gate drive circuitry supports the required test conditions for optimal performance in power conversion systems.

Part Context

This part belongs to Watech Electronics' portfolio of RF and power devices, established in 2010. The company provides discrete solutions for telecommunications and power applications. The HGW40N120FHA is part of their broader range of IGBTs used in energy storage and communication infrastructure.