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Product Detailed Parameters
- Description：IGBT 1200V 80A TO-247-3
- Series：-
- Mfr：Watech Electronics
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 40A
- Power - Max：441 W
- Switching Energy：2.23mJ (on), 1.64mJ (off)
- Input Type：Standard
- Gate Charge：300 nC
- Td (on/off) @ 25°C：68ns/383ns
- Test Condition：600V, 40A, 12Ohm, 15V
- Reverse Recovery Time (trr)：378 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The HKW40N120FHEI is a field-stop IGBT manufactured by Watech Electronics. It features a 1200V collector-emitter voltage rating and a continuous collector current of 40A at 25°C. The device utilizes an IGBT type with optimized switching characteristics, including turn-on delay time (Td(on)) of 68ns and turn-off delay time (Td(off)) of 274ns at 25°C. Switching energy values are specified as 2.92mJ for on-state and 2.84mJ for off-state under test conditions of 600V, 40A, 10Ohm gate resistance, and 15V gate drive. Gate charge is rated at 296nC.
Feature Summary
- Field-stop IGBT technology for enhanced performance
- High breakdown voltage capability of 1200V
- Optimized switching speed characteristics
- Designed for high-power industrial applications
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
- Uninterruptible power systems
Procurement Notes
Verify the exact suffix 'HEI' against official Watech Electronics documentation to confirm pinout and thermal specifications. Ensure compatibility with existing gate driver requirements regarding the 15V drive voltage and 296nC gate charge. Cross-reference datasheet parameters such as switching energies with your specific circuit conditions at 600V and 40A to validate thermal management needs.
Selection Notes
Select this component when a 1200V rating is required for high-voltage isolation in power conversion stages. The 40A current capacity suits moderate-power industrial loads. Consider the specific switching energy values (2.92mJ/2.84mJ) for efficiency calculations in high-frequency operation. Ensure the package type matches the PCB footprint and thermal design constraints of the target assembly.
Part Context
This part belongs to Watech Electronics' discrete semiconductor portfolio, specifically within their IGBT line. The company focuses on power devices for photovoltaics, energy storage, and industrial inverters. The HKW series represents their field-stop technology offerings designed for improved switching performance compared to standard trench IGBTs.
Replacement Considerations
Publicly confirmed substitute part numbers for HKW40N120FHEI are not available in the provided source material. Verify electrical equivalence with other 1200V 40A field-stop IGBTs from different manufacturers only after detailed parameter matching.
