HKW75N65SHRA

HKW75N65SHRA

$13.60
  • Description:IGBT 650V 90A TO-247-3
  • Series:-

SKU:b76c02ba2666 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 650V 90A TO-247-3
  • Series:-
  • Mfr:Watech Electronics
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):90 A
  • Current - Collector Pulsed (Icm):300 A
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 75A
  • Power - Max:395 W
  • Switching Energy:1.3mJ (on), 800µJ (off)
  • Input Type:Standard
  • Gate Charge:92 nC
  • Td (on/off) @ 25°C:25ns/106ns
  • Test Condition:400V, 75A, 1.5Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Grade:-
  • Qualification:-

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HKW75N65SHRA

Overview

The HKW75N65SHRA is a high-speed IGBT power transistor designed for robust industrial and energy conversion applications. It features ultra-low switching losses and serves as a direct plug-and-play replacement for pure silicon-based IGBTs in hard-switching topologies, ensuring benchmark efficiency. The device integrates an internal Silicon Carbide (SiC) Schottky barrier diode to enhance performance. It supports a maximum junction temperature of 175°C, providing reliable operation under demanding thermal conditions.

Feature Summary

  • Ultra-low switching losses for improved system efficiency
  • Internal integration of SiC Schottky barrier diode
  • Direct plug-and-play replacement for standard silicon IGBTs
  • High-temperature capability with 175°C maximum junction rating

Applications

  • Hard-switching power converter topologies
  • Industrial motor drives
  • High-efficiency power supply systems

Procurement Notes

Verify the specific manufacturer datasheet to confirm pinout compatibility and thermal characteristics when replacing existing silicon IGBTs. Ensure that the supplier provides official documentation confirming the integrated SiC diode specifications and the 175°C junction temperature rating. Cross-reference ordering codes with authorized distributors to avoid counterfeit components.

Selection Notes

Select this component for applications requiring high efficiency in hard-switching environments where low switching loss is critical. Its design allows for direct substitution of conventional silicon IGBTs without major circuit redesign. Consider the 175°C junction temperature limit for thermal management planning in high-power density designs.

Part Context

This part belongs to the category of high-speed power transistors. It is engineered to bridge the performance gap between traditional silicon devices and wide-bandgap technologies by integrating SiC diodes within an IGBT structure. This approach targets industries seeking efficiency improvements without fully transitioning to complex new packaging or control architectures.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

HKW75N65SHRAHKW75N65SHRA
$13.60
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