HMC-APH196

Overview

The HMC-APH196 is a two-stage GaAs HEMT MMIC medium power amplifier designed for operation between 17 and 30 GHz. It provides 20 dB of gain at 20 GHz. The device is engineered for VSAT applications, with performance testing conducted in the 24 GHz to 27 GHz range. All bond pads and the die backside are metallized with Ti/Au to enhance conductivity and robustness.

Feature Summary

• Two-stage GaAs HEMT MMIC architecture
• Ti/Au metallization on bond pads and die backside
• Medium power amplification capability

Applications

• VSAT systems
• Ka-band communication links
• Point-to-point microwave radio

Procurement Notes

Verify that the component is received as a bare die rather than a packaged module. Confirm the presence of Ti/Au metallization on all contact surfaces. Ensure handling procedures account for the fragile nature of the exposed semiconductor substrate during assembly.

Selection Notes

Select this component for designs requiring high gain within the 17 to 30 GHz spectrum. Consider the bare die format for custom RF layout integration. Evaluate thermal management requirements due to the medium power classification and direct mounting constraints.

Part Context

This part belongs to Analog Devices' portfolio of GaAs HEMT MMICs. It serves as a specialized solution for high-frequency signal chain applications where compact size and specific frequency coverage are critical design parameters.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.