HMD13P5N10S

HMD13P5N10S

$1.53
  • Description:HMD13P5N10S
  • Series:-
  • Mfr:HY Electronic (Cayman) Limited
  • Package:Tape & Reel (TR)

SKU:4fc260c1bd13 Category: Brand:

  
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Product Detailed Parameters

  • Description:HMD13P5N10S
  • Series:-
  • Mfr:HY Electronic (Cayman) Limited
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:13.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:8.3mOhm @ 13.5A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3130 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SOP
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

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HMD13P5N10S

Overview

The HMD13P5N10S is a single N-channel MOSFET manufactured by HY Electronic (Cayman) Limited. It features a drain-source voltage rating of 100V and a continuous drain current of 13.5A at VGS=10V. The device utilizes an SOP-8 package with UL 94V-0 flammability classification. Electrical characteristics include a maximum on-resistance of 8.3 mΩ at VGS=10V and 10.6 mΩ at VGS=4.5V. The component operates within a junction temperature range up to 150°C and supports a storage temperature range from -55°C to 150°C.

Feature Summary

  • Provides low on-resistance for efficient power switching in high-current applications
  • Features integrated body diode with defined reverse recovery characteristics
  • Constructed using halogen-free materials compliant with RoHS standards

Applications

  • Power management circuits requiring 100V isolation
  • DC-DC converter topologies utilizing the SOP-8 footprint
  • General-purpose switching applications operating within industrial temperature ranges

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation before procurement, as suffixes may indicate variations in packaging or reel specifications. Confirm that the requested quantity aligns with standard reel sizes of 2,500 pieces per reel. Ensure compliance with RoHS directives and verify the UL 94V-0 material rating matches project requirements. Cross-reference the marking code K7006 to authenticate the component origin.

Selection Notes

Select this component when a 100V N-channel MOSFET with an SOP-8 footprint is required. Evaluate the thermal resistance limits to ensure the junction temperature remains below 150°C under expected load conditions. Consider the gate charge parameters for driving circuit compatibility. Verify that the continuous drain current of 13.5A meets the peak and steady-state demands of the target application without exceeding safe operating area boundaries.

Part Context

This part belongs to the HMD series of power MOSFETs produced by HY Electronic (Cayman) Limited. The series focuses on providing cost-effective solutions for general power switching needs. The SOP-8 package allows for surface-mount integration into compact printed circuit boards. The product line emphasizes compliance with environmental standards such as RoHS and halogen-free manufacturing processes.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided datasheet. Engineers must perform independent pinout and electrical parameter matching when identifying alternative components from other manufacturers.

HMD13P5N10SHMD13P5N10S
$1.53
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