HMF11S65S

$2.47

Description：HMF11S65S
Series：-
Mfr：HY Electronic (Cayman) Limited
Package：Retail Package

SKU:bd2b0c6f1115 Category: Single FETs, MOSFETs Brand: HY Electronic (Cayman) Limited

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Product introduction

Product Detailed Parameters

Description：HMF11S65S
Series：-
Mfr：HY Electronic (Cayman) Limited
Package：Retail Package
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19.7 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：821 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：104W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：ITO-220AB
Package / Case：TO-220-3 Full Pack, Isolated Tab

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HMF11S65S

Overview

The HMF11S65S is a Super Junction Power MOSFET manufactured by HY Electronic (Cayman) Limited, housed in an ITO-220AB package. It features a Drain-Source Voltage (VDS) of 650V and a Continuous Drain Current (ID) of 11A at TC=100°C. The typical Static Drain-Source On-Resistance (RDS(ON)) is 320mΩ at VGS=10V and ID=5.5A. Key electrical parameters include a Gate Threshold Voltage of 3.3V typ, Total Gate Charge of 19.7nC at VGS=10V, and Avalanche Energy rating of 54mJ. Thermal resistance from junction to case is 1.5°C/W max.

Feature Summary

Extremely low gate charge for efficient switching
Excellent output capacitance profile
Fast switching capability
100% UIS tested with Pb-free lead plating

Applications

Telecom / Server Power Supplies
Industrial Power Supplies
UPS / Solar
Lighting / Charger / Adapter

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the ITO-220AB package dimensions align with your PCB footprint requirements. Ensure thermal management solutions account for the specified junction-to-case thermal resistance values under actual operating conditions. Validate all electrical limits against your system's maximum stress scenarios.

Selection Notes

Select this component for applications requiring high voltage blocking capabilities combined with moderate current handling in through-hole packages. The Super Junction technology offers improved efficiency compared to standard planar MOSFETs. Consider the 650V rating for primary-side or high-voltage secondary-side isolation barriers. Evaluate the thermal performance based on your expected ambient temperatures and heat sinking capabilities.

Part Context

This device belongs to the Super Junction Power MOSFET category designed for general-purpose power conversion. It utilizes advanced semiconductor architecture to reduce conduction losses while maintaining robust avalanche ruggedness. The ITO-220AB package provides reliable mechanical mounting and thermal dissipation for industrial and commercial power supply environments.