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Product Detailed Parameters
- Description：TRANS NPN/PNP 50V 200MA SC74
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Transistor Type：1 NPN, 1 PNP
- Current - Collector (Ic) (Max)：200mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max)：2µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 6V
- Power - Max：380mW
- Frequency - Transition：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-74, SOT-457
- Supplier Device Package：SC-74
- Grade：-
- Qualification：-
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Overview
The HN1B01FDW1T1 is a digital transistor from onsemi, featuring an NPN and PNP configuration within a single SOT-363 package. It integrates internal base resistors to simplify circuit design by reducing component count. The device supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. With a power dissipation rating of 250 mW and an operating temperature range from -55°C to +150°C, it is suitable for various switching applications.
Feature Summary
- Dual NPN/PNP configuration in a compact surface-mount package
- Integrated base resistors reduce external component requirements
- High thermal stability with extended operating temperature range
Applications
- General-purpose switching circuits
- Logic level translation interfaces
- Driver stages for low-power loads
Procurement Notes
Verify the specific suffix FDW1T1 against official datasheets to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives if required for the target market. Cross-reference part numbers with authorized distributors to avoid counterfeit components. Confirm storage conditions and moisture sensitivity levels prior to assembly.
Selection Notes
Select this component when space constraints require dual transistor functionality in a single footprint. Consider the integrated resistor values for biasing requirements. Evaluate thermal management needs given the 250 mW dissipation limit in small packages. Compare performance metrics against alternative digital transistors for cost and availability optimization.
Part Context
This part belongs to onsemi's family of digital transistors designed for replacing multiple discrete components. It simplifies PCB layout by combining two transistors and their associated biasing resistors into one unit. The SOT-363 package offers a balance between electrical performance and board space efficiency for consumer and industrial electronics.
Replacement Considerations
- MUN5231DW1T1G
- BC847BQK
FAQ
What is the maximum collector-emitter voltage for the HN1B01FDW1T1?
The maximum collector-emitter voltage (VCEO) is 50 V.
Does the HN1B01FDW1T1 include internal resistors?
Yes, it includes integrated base resistors for both the NPN and PNP transistors.
What is the operating temperature range?
The device operates within a temperature range of -55°C to +150°C.
