HN1C01F-GR(TE85L,F

Overview

The HN1C01F-GR(TE85L,F) is a dual NPN silicon epitaxial planar transistor manufactured using Toshiba's PCT process. It features a compact SM6 package and supports a collector-emitter voltage (VCEO) of 50 V with a maximum collector current (IC) of 150 mA. The device offers a DC current gain (hFE) range of 200 to 400 for the GR classification, with a transition frequency (fT) of 80 MHz at 1 mA. Power dissipation is rated at 300 mW, and it operates within a junction temperature range up to 125°C.

Feature Summary

• Dual NPN configuration in a small surface-mount package
• High breakdown voltage and moderate current handling capability
• Optimized hFE linearity for audio frequency applications

Applications

• Audio frequency general purpose amplifiers
• Small signal switching circuits
• General purpose amplifier stages

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm environmental compliance status. Confirm that the selected variant matches the required hFE binning specifications for the intended circuit design. Ensure compatibility with standard surface mount assembly processes.

Selection Notes

Select this component when a dual NPN configuration is required in a minimal footprint. Consider the 50 V rating and 150 mA limit for appropriate load conditions. Verify thermal management requirements given the 300 mW power dissipation constraint in the specified package.

Part Context

This part belongs to the HN1C01F series of dual NPN transistors designed for low-power, high-voltage applications. It utilizes Toshiba's PCT process technology to achieve reliable performance in compact electronic designs requiring dual transistor functionality.

Replacement Considerations

Check for direct equivalents such as the HN1C01FU-GR(TE85L,F), which shares similar electrical characteristics but utilizes a US6 package instead of the SM6 form factor. Verify pinout compatibility before substitution.