HN1C01FYTE85LF

Overview

The HN1C01FYTE85LF is a dual NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 150 mA. The device provides a DC current gain (hFE) ranging from 120 to 400, with a transition frequency of 80 MHz at 1 mA collector current. Power dissipation is rated at 300 mW, and the component is housed in an SMD SM6 package.

Feature Summary

• Dual NPN configuration within a compact surface-mount package
• High breakdown voltage and moderate current handling capability
• Wide DC current gain range for flexible biasing applications

Applications

• Audio-frequency general-purpose amplifier circuits
• Low-power switching applications
• Signal amplification stages

Procurement Notes

Verify the ordering suffix 'Y' corresponds to the specific hFE classification of 120 to 240 as defined in the datasheet. Confirm that the 'TE85L,F' suffix indicates lead-free compliance and reel packaging format. Ensure compatibility with standard SM6 footprint dimensions during PCB layout verification.

Selection Notes

Select this component when a dual NPN configuration is required for audio or low-frequency signal processing. The 50 V rating suits low-voltage logic interfaces. Verify thermal management requirements against the 300 mW power dissipation limit under expected operating conditions.

Part Context

This part belongs to the HN1C01F series of dual NPN transistors designed for audio frequency applications. The 'Y' suffix denotes a specific binning category for DC current gain, distinguishing it from other variants like the GR version which covers higher gain ranges.

Replacement Considerations

Direct substitutes include the HN1C01FGR(TE85L,F) variant, which shares identical electrical ratings but offers a different hFE classification range of 200 to 400. Other dual NPN transistors in the SM6 package may require pinout and parameter verification.