HN2A01FE-GR(TE85LF

Overview

The Toshiba HN2A01FE is a dual PNP epitaxial planar transistor housed in a US-6 (SOT-563) package. It features a collector-emitter voltage of -50 V and a maximum collector current of -150 mA. The device offers a DC current gain ranging from 120 to 400, with a transition frequency of 80 MHz. Collector-emitter saturation voltage is typically -0.1 V at -100 mA. Total power dissipation is rated at 100 mW, supporting junction temperatures up to 150 °C.

Feature Summary

• Dual configuration within a compact surface-mount package for space-constrained designs
• High breakdown voltage and current handling capabilities suitable for general-purpose amplification
• Wide DC current gain range with excellent linearity characteristics

Applications

• Audio frequency general purpose amplifier applications
• General-purpose switching circuits
• Low-voltage signal processing stages

Procurement Notes

Verify the specific hFE ranking suffix required for your design, as the GR variant indicates a gain range of 200 to 400. Confirm RoHS compliance status directly with the manufacturer or authorized distributor prior to ordering. Ensure the US-6 package footprint matches your PCB layout constraints. Review the absolute maximum ratings carefully to prevent exceeding the 100 mW total power dissipation limit under operating conditions.

Selection Notes

Select this component when a dual PNP configuration is needed in a small form factor. The high voltage rating of 50 V allows operation in standard logic or analog supply rails. Consider the 80 MHz transition frequency for audio or low-frequency signal applications. Verify that the required hFE bin aligns with the circuit's biasing needs, particularly if precise gain matching between the two transistors is critical.

Part Context

This part belongs to Toshiba's lineup of small-signal dual transistors designed for efficient board space utilization. It serves as a complementary or paired solution for differential stages and push-pull configurations. The US-6 package provides thermal and mechanical stability for automated assembly processes in consumer and industrial electronics manufacturing.

Replacement Considerations

Check datasheets for alternative dual PNP transistors in SOT-563 packages with similar -50 V ratings and -150 mA current limits. Verify pinout compatibility, specifically the emitter-base-collector arrangement, before substitution. Ensure the replacement device meets the same electrical characteristics regarding saturation voltage and transition frequency.