HN2A01FU-Y(TE85L,F

Overview

The HN2A01FU-Y(TE85L,F is a surface-mount bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It contains two PNP transistors in a US6 package, which corresponds to the 6-TSSOP, SC-88, or SOT-363 form factor. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 150 mA. It features a transition frequency of 80 MHz and a maximum power dissipation of 200 mW.

Feature Summary

• Dual PNP transistor configuration within a single compact surface-mount package
• High-speed switching capability with an 80 MHz transition frequency
• Designed for low-power applications with a 200 mW maximum power dissipation rating

Applications

• General-purpose signal switching in embedded systems
• Logic level translation circuits
• Small-signal amplification stages

Procurement Notes

Verify the specific suffix TE85L,F against the manufacturer's official datasheet to confirm tape-and-reel specifications and pinout orientation. Ensure the US6 package dimensions match the target PCB footprint requirements. Cross-reference the RoHS compliance status with current environmental regulations before finalizing procurement orders.

Selection Notes

Select this component when a dual PNP configuration is required in a minimal footprint. The 50 V rating and 150 mA current capacity suit low-voltage logic interfaces. Consider the 80 MHz frequency response for moderate-speed digital signals rather than high-frequency RF applications.

Part Context

This part belongs to Toshiba's discrete semiconductor lineup, specifically designed for space-constrained consumer and industrial electronics. The US6 package allows for automated surface-mount assembly, supporting high-volume manufacturing processes while maintaining reliable electrical performance for standard logic operations.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.