HN3C10FUTE85LF

Overview

The HN3C10FUTE85LF is a dual NPN RF bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It operates at a collector-emitter breakdown voltage of 12V with a maximum DC collector current of 80mA. The device features a transition frequency (fT) of 7GHz and a power dissipation rating of 200mW. It is housed in a surface-mount US6 package, designed for high-frequency applications requiring compact integration and reliable RF performance within specified thermal limits.

Feature Summary

• Dual NPN configuration for integrated RF circuitry
• High transition frequency suitable for GHz-range signals
• Compact surface-mount packaging for space-constrained designs

Applications

• RF signal amplification stages
• Wireless communication modules
• High-frequency switching circuits

Procurement Notes

Verify the component status carefully as external sources indicate this part may be obsolete or no longer manufactured. Confirm availability through official Toshiba channels or authorized distributors before finalizing procurement plans. Ensure the specific suffix matches project requirements exactly.

Selection Notes

Select this component when a dual NPN topology is required for RF applications operating near 12V. Consider the 7GHz fT limit for signal bandwidth constraints. Evaluate the US6 package dimensions against PCB layout restrictions. Verify thermal management capabilities given the 200mW dissipation rating in the intended enclosure.

Part Context

This component belongs to Toshiba's RF BJT transistor series, specifically engineered for radio frequency applications. The dual NPN structure allows for differential signaling or push-pull configurations in small form factors. It complements other RF discrete devices in Toshiba's portfolio for complete front-end module solutions.

Replacement Considerations

Public sources indicate this product is no longer manufactured. Check for official substitute part numbers provided by Toshiba Semiconductor and Storage. Do not assume direct pin-to-pin compatibility with generic RF transistors without verifying electrical parameters and package dimensions.