HN3C51F-BL(TE85L,F

Overview

The HN3C51F-BL(TE85L,F) is a dual NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It features a high collector-emitter voltage of 120V and a DC current gain (hFE) ranging from 350 to 700 for the BL rank. The device operates with a maximum collector current of 100mA and total power dissipation of 300mW. Key electrical parameters include a transition frequency of 100MHz, saturation voltage of 0.3V at 10mA, and noise figure of 1.0dB. It utilizes an SOT-89-6 package.

Feature Summary

• High breakdown voltage capability up to 120V for robust circuit operation
• Elevated DC current gain ensuring efficient signal amplification
• Low noise characteristics suitable for sensitive audio applications

Applications

• Audio frequency general purpose amplifier circuits
• Signal processing stages requiring low noise performance
• General purpose switching applications within voltage limits

Procurement Notes

Verify the specific hFE ranking suffix against the datasheet requirements. Confirm the package type matches the design footprint. Ensure compliance with environmental directives before integration into final products.

Selection Notes

Select this component when high voltage tolerance and elevated gain are required in a compact form factor. Consider the thermal derating curves for continuous operation near maximum ratings. Verify the BL bin requirement for minimum gain specifications.

Part Context

This part belongs to Toshiba's silicon NPN epitaxial transistor series designed for audio and general-purpose amplification. It offers a balance of high voltage handling and low noise performance in a surface-mount configuration.

Replacement Considerations

Check for equivalent dual NPN transistors with matching VCEO and hFE ranges. Verify pinout compatibility and package dimensions before substitution.