HP8K22TB

FET, MOSFET Arrays Overview

The HP8K22TB is a dual N-channel power MOSFET array manufactured by Rohm Semiconductor, housed in an HSOP8 surface-mount package. It features a drain-source voltage (V_DSS) of 40V and a continuous drain current (I_D) of 6.5A. The device exhibits low on-resistance, with typical values of 0.044Ω at V_GS = 4.5V and 0.035Ω at V_GS = 10V. Key electrical parameters include a total gate charge (Q_g) of 1.3nC, a drive voltage of 4.5V, and a power dissipation rating of 2.5W. The component supports a storage temperature range from -55°C to 150°C and complies with RoHS standards.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration for synchronized switching applications
• Low on-resistance optimized for efficient power handling
• Compact HSOP8 surface-mount package design
• Lead-free plating compliant with environmental directives

FET, MOSFET Arrays Applications

• Motor control circuits
• General-purpose switching applications
• DC/DC converter stages

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and tape-and-reel quantity requirements against the manufacturer's latest datasheet before finalizing procurement. Confirm that the component status aligns with current design-in recommendations, as availability may vary based on production lifecycle updates. Ensure all environmental compliance certifications are documented for regulatory adherence.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel solution is required for 40V systems. The low gate charge facilitates fast switching speeds, reducing driver complexity. Evaluate thermal management needs relative to the 2.5W power dissipation limit in the HSOP8 package. Compare on-resistance performance at the intended gate drive voltage to ensure efficiency targets are met.

FET, MOSFET Arrays Part Context

This part belongs to Rohm's HSOP8 dual MOSFET family, designed for space-constrained power electronics. It serves as a complementary alternative to single-channel high-current devices where two matched transistors are needed in a small footprint. The series emphasizes low R_DS(on) to minimize conduction losses in portable and industrial equipment.

FET, MOSFET Arrays Replacement Considerations

The QH8KB6 is identified as a recommended replacement with the same TSMT8 package and similar specifications. Verify pinout compatibility and parameter margins before substitution. The QH8K22 is noted as not recommended for new designs.