HP8KC5TB1

FET, MOSFET Arrays Overview

The HP8KC5TB1 is a dual N-channel power MOSFET from ROHM Semiconductor, housed in an HSOP8 (Symmetry Dual) surface-mount package. It features a drain-source voltage rating of 60V and a continuous drain current of 12A. The device exhibits low on-resistance, with typical values of 0.099Ω at VGS=4.5V and 0.069Ω at VGS=10V. Key electrical characteristics include a total gate charge of 1.7nC, a power dissipation capacity of 20W, and a drive voltage of 4.5V. The component operates within a storage temperature range of -55°C to 150°C and complies with RoHS directives.

FET, MOSFET Arrays Feature Summary

• Low on-resistance design for efficient switching performance
• Compact HSOP8 surface-mount package suitable for space-constrained applications
• Lead-free plating compliant with RoHS directives

FET, MOSFET Arrays Applications

• Switching circuits
• Motor driver applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm packaging details. Standard tape-and-reel quantities typically start at 2500 units. Confirm that the application environment does not require automotive-grade qualification, as this standard product is explicitly noted as unsuitable for车载 equipment. Ensure thermal management aligns with the 20W power dissipation rating under expected operating conditions.

FET, MOSFET Arrays Selection Notes

Select the HP8KC5TB1 for general-purpose switching and motor control tasks requiring a 60V N-channel configuration. Compare its 12A current rating and low RDS(on) against similar HSOP8 devices if higher current density or different voltage ratings are needed. Consider the 1.7nC gate charge for driving capability requirements. Verify that the 4.5V drive voltage matches the logic level of the controlling circuitry for optimal efficiency.

FET, MOSFET Arrays Part Context

This component belongs to ROHM's series of dual N-channel power MOSFETs designed for compact surface-mount applications. The HSOP8 package provides a symmetry dual configuration, allowing for integrated high-side and low-side switching functions in a small footprint. This family targets cost-sensitive consumer and industrial electronics where space optimization and moderate power handling are critical.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the 60V/12A N+N channel specification and HSOP8 package. Evaluate alternatives based on comparable RDS(on) at 4.5V and 10V VGS, and similar gate charge values to ensure compatible drive requirements. Verify pinout compatibility before integration.