HP8KE5TB1

FET, MOSFET Arrays Overview

The HP8KE5TB1 is a dual N-channel power MOSFET manufactured by ROHM Semiconductor, housed in an HSOP-8 surface-mount package. It features a drain-source voltage rating of 100 V and a continuous drain current of 8.5 A. The device exhibits low on-resistance values of 0.2 Ω at Vgs = 4.5 V and 0.148 Ω at Vgs = 10 V. Key electrical parameters include a total gate charge of 1.7 nC, a maximum power dissipation of 20 W, and a drive voltage of 4.5 V. Operating characteristics support a temperature range from -55 °C to 150 °C with a typical reverse transfer time of 28 ns.

FET, MOSFET Arrays Feature Summary

• Low on-resistance design for efficient switching performance
• Compact HSOP-8 surface mount package suitable for space-constrained applications
• Lead-free plating compliant with RoHS standards
• Halogen-free construction

FET, MOSFET Arrays Applications

• General purpose switching circuits
• Motor driver implementations

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm the specific ordering suffix matches the required tape-and-reel quantity of 2500 units. Ensure the part status aligns with project requirements, as standard-level products may have specific usage restrictions regarding automotive equipment integration.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring 100 V blocking capability with moderate current handling. The low gate charge facilitates faster switching transitions compared to higher-capacitance alternatives. Verify that the thermal management strategy supports the 20 W power dissipation rating within the specified operating temperature limits.

FET, MOSFET Arrays Part Context

This part belongs to the HP8KE series of dual N-channel MOSFETs from ROHM Semiconductor. The series is characterized by low on-resistance and compact packaging, targeting general switching and motor control applications. The TB1 suffix indicates the specific tape-and-reel packaging configuration for automated assembly processes.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Evaluate other HSOP-8 dual N-channel MOSFETs with comparable 100 V ratings and similar on-resistance specifications if pin-compatible replacement is necessary.