HS8K11TB

FET, MOSFET Arrays Overview

The HS8K11TB is a dual N-channel power MOSFET manufactured by ROHM Semiconductor, designed for surface-mount applications. It features a drain-source voltage (Vdss) of 30V and continuous drain currents of 7A and 11A at 25°C. The device utilizes the HSML3030L10 package, providing a maximum power dissipation of 2W. Key electrical parameters include a gate-source threshold voltage of 2.5V @ 1mA and a maximum gate charge of 11.1nC @ 10V. Input capacitance is specified at a maximum of 500pF @ 15V. The component operates within a junction temperature range up to 150°C and supports logic-level gate drive.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration optimized for switching applications
• Logic-level gate drive capability for efficient control
• Compact HSML3030L10 surface-mount package design

FET, MOSFET Arrays Applications

• DC/DC converter circuits
• General-purpose switching applications
• Motor driver stages

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix when sourcing, as variants such as HS8K11TBTR (Reel), HS8K11TBCT (Cut Tape), and HS8K11TBDKR (Digi-Reel) exist. Confirm that the received component matches the required packaging format for your assembly line. Ensure compliance with RoHS3 standards and check for any end-of-life notifications prior to final procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a 30V rating with high current handling in a compact footprint. The low gate charge and logic-level compatibility make it suitable for battery-powered or efficiency-critical systems. Verify thermal management requirements given the 2W power dissipation limit in the small HSML3030L10 package.

FET, MOSFET Arrays Part Context

This part belongs to ROHM's HS8K series of dual N-channel MOSFETs. It shares the same core die and electrical characteristics with the HS8K11 model but is distinguished by its specific HSML3030L10 surface-mount packaging. This family is generally intended for standard commercial electronics rather than automotive-grade applications.

FET, MOSFET Arrays Replacement Considerations

Public documentation lists no direct substitute part numbers for the HS8K11TB. Designers should evaluate other ROHM dual N-channel MOSFETs with similar 30V ratings and compatible pinouts if replacement is necessary.