HSMS-280P-BLKG

RF Diode Overview

The HSMS-280P-BLKG is a surface mount RF Schottky barrier diode manufactured by Broadcom Limited. It features a Bridge Quad configuration housed in an SOT-363 package. The device utilizes silicon technology and supports a maximum forward current of 1 A with a peak inverse voltage matching its breakdown rating. Key electrical specifications include a maximum forward voltage of 410 mV, a maximum reverse leakage current of 200 nA at 50 V, and a typical capacitance of 2.0 pF. The component operates within a temperature range of -65°C to +150°C.

RF Diode Feature Summary

• High breakdown voltage optimized for demanding applications
• Six-sigma quality level ensuring reliability
• Low failure rate (FIT) performance
• Lead-free construction compliant with environmental standards

RF Diode Applications

• Analog circuit design
• Digital signal processing
• RF mixer circuits

RF Diode Procurement Notes

Verify the specific ordering suffix BLKG to confirm the bulk packaging format containing 100 units per antistatic bag. Confirm the lead code P corresponds to the Bridge Quad configuration within the SOT-363 package. Ensure compatibility with RoHS directives if required by the assembly process.

RF Diode Selection Notes

Select this component when high isolation and bridge rectification are required in a compact surface mount footprint. The HSMS-280x series offers matched dice from adjacent wafer sites to ensure high symmetry. Consider the higher series resistance compared to lower voltage families when designing for efficiency.

RF Diode Part Context

This part belongs to the HSMS-280x family of surface mount RF Schottky barrier diodes. The series provides various configurations including single, dual, and quad versions. The HSMS-280x family is distinguished by its high breakdown voltage capabilities, making it suitable for high-voltage RF applications where other families may fail.

RF Diode Replacement Considerations

HSMS-280M-BLKG

RF Diode FAQ

What is the internal configuration of the HSMS-280P?

The HSMS-280P contains a Bridge Quad configuration, utilizing four Schottky diodes arranged in a bridge topology within a single SOT-363 package.

How does the manufacturing process affect diode matching?

Avago's manufacturing techniques ensure that diodes in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match between components.

What is the maximum junction temperature for this device?

The maximum junction temperature (Tj) for the HSMS-280P is 150°C.