HSMS-2825-TR1G

RF Diode Overview

The HSMS-2825-TR1G is a surface mount RF Schottky barrier diode manufactured by Broadcom Limited. It features an unconnected pair configuration housed in a SOT-363 package. The device utilizes silicon technology and supports a maximum forward current of 1 A with a peak inverse voltage of 15 V. Key electrical specifications include a typical forward voltage of 340 mV at 0.5 mA, reverse leakage current of 100 nA at 100 V, and dynamic capacitance of 1 pF at 0 V. Operating temperatures range from -65°C to +150°C.

RF Diode Feature Summary

• Low turn-on voltage for efficient signal detection
• Matched diodes within the package for consistent performance
• High thermal conductivity via copper leadframe

RF Diode Applications

• Differential detector circuits
• Temperature compensated detectors
• Voltage doubler configurations

RF Diode Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status and check for End-of-Life notices prior to procurement. Ensure storage conditions meet specified temperature limits to maintain device integrity.

RF Diode Selection Notes

Select this component when matched diode pairs are required for differential applications. The SOT-363 package offers reduced board space compared to larger packages while maintaining high thermal dissipation capabilities suitable for power control circuits.

RF Diode Part Context

This part belongs to the HSMS-282x family of surface mount RF Schottky barrier diodes. The series provides various package configurations including single, dual, and quad versions. The HSMS-2825 specifically designates the unconnected pair topology within this lineup.

RF Diode Replacement Considerations

HSMS-282K serves as a high-isolation alternative for differential detector applications requiring greater separation between diodes.