HSMS-2827-TR2G

RF Diode Overview

The HSMS-2827-TR2G is a surface mount RF Schottky barrier diode configured as a Ring Quad in the SOT-143 package. It features a maximum breakdown voltage of 15 V and a typical forward voltage of 340 mV at 0.5 mA. The device exhibits a reverse leakage current of 10 nA at 15 V and a junction capacitance of 1 pF at 0 V. Dynamic resistance is typically 12 Ω at 5 mA. Operating temperatures range from -65°C to +150°C, with a thermal resistance of 500°C/W.

RF Diode Feature Summary

• Ring quad configuration optimized for double balanced mixer applications
• Matched diodes taken from adjacent wafer sites for consistent performance
• Low turn-on voltage and low series resistance for efficient RF signal processing

RF Diode Applications

• Double balanced mixers up to 6 GHz
• Frequency multipliers
• Biased or unbiased large signal detectors up to 4 GHz

RF Diode Procurement Notes

Verify component authenticity through authorized channels. Confirm RoHS compliance status via official documentation. Check for end-of-life notifications or product change notices prior to final design approval.

RF Diode Selection Notes

Select this part for high-isolation mixer designs requiring matched diode pairs. Ensure PCB layout accommodates SOT-143 footprint dimensions. Consider thermal management requirements given the specific thermal resistance characteristics of the package.

RF Diode Part Context

Part of the HSMS-282x family of surface mount RF Schottky diodes designed for analog and digital applications. The series provides flexibility through various package configurations including single, dual, and quad versions.

RF Diode Replacement Considerations

HSMS-282R serves as a functional substitute in the SOT-363 package for ring quad applications when board space constraints differ.