HSMS-282N-BLKG

RF Diode Overview

The HSMS-282N-BLKG is a surface mount RF Schottky barrier diode manufactured by Broadcom Limited, belonging to the HSMS-282x series. It features a Common Anode Quad configuration housed in an SOT-363 package with six leads. The device utilizes silicon technology and is designed for analog and digital applications including mixing, detecting, switching, sampling, clamping, and wave shaping. Key electrical specifications include a breakdown voltage of 15 V, a forward voltage of 340 mV at 1 mA, reverse leakage current of 10 nA at 100 V, junction capacitance of 1 pF at 0 V, and dynamic resistance of 12 Ω at 5 mA. It operates within a temperature range of -65°C to +150°C.

RF Diode Feature Summary

• Common Anode Quad configuration provides matched diodes taken from adjacent wafer sites for consistent performance.
• SOT-363 package offers increased flexibility, reduced board space, and lower cost compared to larger packages.
• Low turn-on voltage and low series resistance optimize performance across all current levels.
• Six-sigma quality level ensures high reliability and low failure rates.

RF Diode Applications

• Mixing and frequency multipliers up to 6 GHz
• Biased or unbiased large signal detectors for AGC or power monitoring up to 4 GHz
• DC biased small signal detectors operating up to 1.5 GHz

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for obsolescence notices as this part may be subject to lifecycle changes. Ensure storage conditions meet moisture sensitivity requirements prior to assembly.

RF Diode Selection Notes

Select the HSMS-282N-BLKG when a Common Anode Quad topology is required for balanced mixer or detector circuits. The SOT-363 package is suitable for designs prioritizing compact footprint and thermal efficiency. Compare SPICE parameters against alternative families like HSMS-280x or HSMS-286x if specific voltage or noise characteristics differ from standard HSMS-282x profiles.

RF Diode Part Context

This component is part of the HSMS-282x family of surface mount RF Schottky barrier diodes originally developed by Agilent Technologies and now produced by Broadcom Limited. The family includes various configurations such as single, dual, and quad versions in SOT-23, SOT-143, SOT-323, and SOT-363 packages to provide design flexibility for RF applications.

RF Diode Replacement Considerations

Direct substitutes within the same configuration include HSMS-282N (without suffix) or other HSMS-282x variants with identical pinouts and electrical characteristics. Verify package compatibility and thermal resistance values when replacing with components from different manufacturers.

RF Diode FAQ

What is the maximum junction temperature for the HSMS-282N-BLKG?

The maximum junction temperature is 150°C under all operating conditions.

How are the diodes in the quad configuration matched?

Agilent's manufacturing techniques ensure that dice found in quads are taken from adjacent sites on the wafer, assuring the highest degree of match.

What is the typical capacitance of the HSMS-282N-BLKG?

The typical capacitance is 1 pF measured at 0 V reverse bias and 1 MHz frequency.