RF Diode HSMS-282N-TR2G product image

HSMS-282N-TR2G

  • Description:RF DIODE SCHOTTKY 15V SOT-363
  • Series:-

SKU:31532bc38862 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

HSMS-282N-TR2G is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is RF DIODE SCHOTTKY 15V SOT-363. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HSMS-282N-TR2G

  • Description:RF DIODE SCHOTTKY 15V SOT-363
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - 2 Pair Common Anode
  • Voltage - Peak Reverse (Max):15V
  • Current - Max:1:00 AM
  • Capacitance @ Vr, F:1pF @ 0V, 1MHz
  • Resistance @ If, F:12Ohm @ 5mA, 1MHz
  • Power Dissipation (Max):-
  • Operating Temperature:150°C (TJ)
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363

RF Diode datasheet and documents for HSMS-282N-TR2G

HSMS-282N-TR2G

RF Diode Overview

The HSMS-282N-TR2G is a surface mount RF Schottky barrier diode manufactured by Broadcom Limited. It features a quad common anode configuration housed in a SOT-363 package. The device utilizes silicon technology and supports a maximum forward current of 1 A under pulse conditions, with a peak inverse voltage rating of 15 V. Key electrical specifications include a typical forward voltage of 340 mV at 0.5 mA, a reverse leakage current of 100 nA at 15 V, and a junction capacitance of 1 pF. The component operates within a temperature range of -65°C to +150°C.

RF Diode Feature Summary

  • Low turn-on voltage for efficient signal detection
  • Matched diodes for consistent performance in pairs and quads
  • High thermal conductivity for greater power dissipation

RF Diode Applications

  • Mixing applications up to 6 GHz
  • Detecting and sampling circuits
  • Clamping and wave shaping

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm package type and tape/reel specifications. Confirm RoHS compliance status through official documentation before integration. Check for end-of-life notifications or product change notices that may affect long-term availability or manufacturing parameters.

RF Diode Selection Notes

Select this component when a quad common anode configuration is required for RF mixing or detection. The SOT-363 package offers board space savings compared to larger packages while maintaining high thermal performance. Ensure the application frequency and voltage levels align with the 15 V breakdown and low capacitance characteristics.

RF Diode Part Context

This part belongs to the HSMS-282x series of surface mount RF Schottky barrier diodes. The series provides various configurations including single, dual, and quad versions to offer design flexibility. The HSMS-282N specifically denotes the quad common anode variant within the SOT-363 footprint family.

RF Diode Replacement Considerations

Consult the HSMS-282x datasheet for pin-compatible alternatives such as HSMS-282M (Common Cathode Quad) if the circuit topology allows for configuration changes. Verify lead code identification and package dimensions for any substitute parts.

HSMS-282N-TR2GHSMS-282N-TR2G

Click on the inquiry