RF Diode HSMS-2865-TR1 product image

HSMS-2865-TR1

$0.40
  • Description:RF DIODE SCHOTTKY 4V SOT-143-4
  • Series:-

SKU:39e4caef1abf Category: Brand:

  
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HSMS-2865-TR1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is RF DIODE SCHOTTKY 4V SOT-143-4. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HSMS-2865-TR1

  • Description:RF DIODE SCHOTTKY 4V SOT-143-4
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - 2 Independent
  • Voltage - Peak Reverse (Max):4V
  • Current - Max:-
  • Capacitance @ Vr, F:0.3pF @ 0V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):-
  • Operating Temperature:150°C (TJ)
  • Package / Case:TO-253-4, TO-253AA
  • Supplier Device Package:SOT-143-4

RF Diode datasheet and documents for HSMS-2865-TR1

HSMS-2865-TR1

RF Diode Overview

The HSMS-2865-TR1 is a surface mount microwave Schottky detector diode from the HSMS-286x series, manufactured by Broadcom Limited. It features an unconnected pair configuration housed in an SOT-143 package with lead code T5. The device operates optimally within the 915 MHz to 5.8 GHz frequency range. Key electrical specifications include a typical forward voltage of 250 mV (maximum 350 mV) at 1.0 mA and a typical capacitance of 0.30 pF at 0 V reverse bias and 1 MHz. Absolute maximum ratings specify a peak inverse voltage of 4.0 V and a junction temperature limit of 150 °C.

RF Diode Feature Summary

  • Optimized for RF/ID and RFID applications across 915 MHz to 5.8 GHz
  • Provides high detection sensitivity suitable for large signal detection and modulation
  • Features matched diodes from adjacent wafer sites for consistent performance
  • Offers low cost solutions with flexible surface mount configurations

RF Diode Applications

  • RF/ID and RF Tag systems
  • Large signal detection circuits
  • Modulation and RF to DC conversion
  • Voltage doubling applications

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific lot traceability requirements relevant to your manufacturing process. Ensure proper handling procedures are followed due to electrostatic sensitivity.

RF Diode Selection Notes

Select this part when an unconnected pair configuration is required for differential detector designs or independent circuit paths. Consider the SOT-143 package for its thermal conductivity advantages over standard SOT-23 variants. Evaluate bias current requirements against sensitivity and temperature stability needs.

RF Diode Part Context

This component belongs to the HSMS-286x family of DC biased detector diodes designed for low-cost, high-volume production. The family includes various configurations such as single diodes, series pairs, common cathode/anode setups, and bridge quads, all sharing similar core Schottky barrier characteristics optimized for microwave frequencies.

RF Diode Replacement Considerations

The datasheet identifies HSMS-286K as a high-isolation alternative within the same series, featuring grounded center leads for improved isolation in differential detectors. Other family members like HSMS-286B or HSMS-286C may serve as functional substitutes depending on whether single, series, or quad configurations are needed.

HSMS-2865-TR1HSMS-2865-TR1
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