HSMS-286C-BLKG

RF Diode Overview

The HSMS-286C-BLKG is a surface mount microwave Schottky detector diode from the HSMS-286x family, designed for operation between 915 MHz and 5.8 GHz. It features a series pair configuration housed in a miniature SOT-323 (SC-70) package with three leads. The device exhibits a typical forward voltage of 250 mV minimum to 350 mV maximum at 1.0 mA and a capacitance of 0.25 pF at 0 V reverse bias and 1 MHz. Absolute maximum ratings include a peak inverse voltage of 4.0 V and an operating temperature range of -65°C to +150°C.

RF Diode Feature Summary

• Series pair configuration provides matched diodes for consistent performance and voltage doubling applications.
• Miniature SOT-323 package design saves board space while maintaining high detection sensitivity across RF frequencies.
• High isolation grounded center lead options available within the family to reduce RF coupling in differential circuits.

RF Diode Applications

• RF/ID and RFID tag power harvesting
• Large signal detection and modulation
• RF to DC conversion and voltage doubling

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific EOL notifications or product change notices prior to finalizing procurement plans. Ensure storage conditions meet moisture sensitivity level requirements to prevent assembly defects.

RF Diode Selection Notes

Select this part when a series pair configuration is required for voltage doubling or balanced detection circuits. The SOT-323 package offers a compact footprint suitable for space-constrained designs. Evaluate thermal resistance characteristics if high power dissipation is anticipated, as the copper leadframe provides improved thermal conductivity compared to alloy alternatives.

RF Diode Part Context

This component belongs to the Broadcom HSMS-286x family of surface mount microwave Schottky detector diodes. The family includes various configurations such as single diodes, common cathode/anode pairs, and high-isolation unconnected pairs. These devices are optimized for low-cost, high-volume designs in RF identification and detection applications.

RF Diode Replacement Considerations

Direct substitutes within the same family include HSMS-286B (single), HSMS-286E (common anode), and HSMS-286F (common cathode). For higher isolation requirements, consider the HSMS-286K in a SOT-363 package. Verify pinout compatibility and electrical parameters before substitution.

RF Diode FAQ

What is the typical voltage sensitivity of the HSMS-286x series?

The typical voltage sensitivity is up to 50 mV/µW at 915 MHz, 35 mV/µW at 2.45 GHz, and 25 mV/µW at 5.80 GHz.

How does the HSMS-286C differ from other configurations in the series?

The HSMS-286C is configured as a series pair, whereas other variants include single diodes (HSMS-286B), common anode (HSMS-286E), and common cathode (HSMS-286F).

What is the maximum junction temperature for this device?

The absolute maximum junction temperature is 150°C under all operating conditions.