RF Diode HSMS-8209-TR1G product image

HSMS-8209-TR1G

  • Description:DIODE SCHOTTKY 4V 75MW SOT143-4
  • Series:-

SKU:03b8325264f1 Category: Brand:

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HSMS-8209-TR1G is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is DIODE SCHOTTKY 4V 75MW SOT143-4. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HSMS-8209-TR1G

  • Description:DIODE SCHOTTKY 4V 75MW SOT143-4
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - Cross Over
  • Voltage - Peak Reverse (Max):4V
  • Current - Max:-
  • Capacitance @ Vr, F:0.26pF @ 0V, 1MHz
  • Resistance @ If, F:14Ohm @ 5mA, 1MHz
  • Power Dissipation (Max):75 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:TO-253-4, TO-253AA
  • Supplier Device Package:SOT-143-4

RF Diode datasheet and documents for HSMS-8209-TR1G

HSMS-8209-TR1G

RF Diode Overview

The HSMS-8209-TR1G is a surface mount microwave Schottky mixer diode designed for X/Ku-band operations. It features a plastic SOT-23 package and lead-free construction. Key electrical specifications include a breakdown voltage of 4 V, total capacitance of 0.26 pF at 1 MHz, and dynamic resistance of 14 Ω at 5 mA. The device exhibits a typical conversion loss of 6.3 dB at 12 GHz with 1 mW local oscillator power. Absolute maximum ratings specify a total device dissipation of 75 mW and a junction temperature limit of +150°C.

RF Diode Feature Summary

  • Optimized for use at 10-14 GHz
  • Low capacitance and low conversion loss
  • Low dynamic resistance
  • Lead-free surface mount plastic package

RF Diode Applications

  • DBS downconverter applications
  • VSAT downconverter applications
  • X-band microwave mixing circuits
  • Ku-band microwave mixing circuits

RF Diode Procurement Notes

Verify the specific ordering suffix to confirm packaging configuration. The -TR1G suffix indicates a 3,000-piece tape and reel quantity with standard device orientation. Ensure compatibility with automated placement equipment by confirming tape dimensions conform to EIA RS-481 standards. Cross-reference the manufacturer's current datasheet for any updates to mechanical or electrical parameters before finalizing procurement orders.

RF Diode Selection Notes

Select this component for high-frequency mixer designs requiring low parasitic capacitance and minimal conversion loss in the X/Ku bands. The SOT-23 package offers a compact footprint suitable for space-constrained PCB layouts. Consider the matched dice availability if circuit symmetry is critical, as adjacent wafer sites ensure high matching degrees for pairs or quads. Evaluate thermal management requirements against the 75 mW dissipation limit.

RF Diode Part Context

This part belongs to the HSMS-8101, 8202, 8207, and 8209 series of surface mount microwave Schottky mixer diodes. These devices share similar electrical characteristics and are intended for comparable high-frequency applications. The series utilizes Avago Technologies manufacturing techniques to ensure consistent performance across individual units within the same package configuration.

RF Diode Replacement Considerations

Direct substitutes within the same family include HSMS-8101, HSMS-8202, and HSMS-8207. Verify pinout compatibility and package marking codes when swapping between these variants. Ensure that the replacement part meets the specific frequency and impedance requirements of the original design.

HSMS-8209-TR1GHSMS-8209-TR1G

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