HT8KE5TB1

FET, MOSFET Arrays Overview

The HT8KE5TB1 is a dual N-channel power MOSFET manufactured by ROHM Semiconductor. It features a 100V drain-source voltage rating and supports continuous drain currents of ±7A at case temperature (Tc=25°C) or ±2.5A at ambient temperature (Ta=25°C). The device offers a maximum on-state resistance of 193mΩ at VGS=10V and 300mΩ at VGS=4.5V. Packaged in the HSMT-8 surface-mount format, it provides a total power dissipation of 13W with a junction-to-case thermal resistance of 9.4°C/W. The component operates within a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Low on-resistance for efficient switching performance
• High-power small mold package design
• Lead-free plating compliant with RoHS standards
• Halogen-free material composition

FET, MOSFET Arrays Applications

• General electronic switching circuits
• Power management modules
• Motor drive applications

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing procurement. Confirm that the HSMT-8 packaging matches the required footprint for the target PCB layout. Ensure storage conditions adhere to humidity barrier bag requirements to maintain solderability prior to assembly.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel configuration is required for 100V applications. Evaluate the thermal resistance parameters to ensure adequate heat sinking or copper area allocation for the intended duty cycle. Verify gate threshold voltage compatibility with the driving logic levels to guarantee reliable turn-on characteristics under load.

FET, MOSFET Arrays Part Context

This part belongs to the HT8KB5/HT8KE5 series of dual N-channel MOSFETs from ROHM. These devices are designed for high-density mounting using the HSMT-8 package. The series targets cost-effective solutions for consumer electronics and industrial control systems requiring moderate current handling capabilities.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include other dual N-channel MOSFETs in the HSMT-8 package with matching 100V ratings. Verify pinout symmetry and thermal characteristics before implementation.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current for the HT8KE5TB1?

The maximum pulsed drain current is ±10A, limited by a pulse width of 10μs and a duty cycle of 1%.

Does the HT8KE5TB1 support avalanche energy operation?

Yes, the device can withstand a single-pulse avalanche energy of 0.50 mJ under specified test conditions.

What is the reverse recovery time of the body diode?

The typical reverse recovery time is 28 ns when measured at IS = 2.5A and di/dt = 100A/μs.