HT8KE6TB1

FET, MOSFET Arrays Overview

The HT8KE6TB1 is a dual N-channel power MOSFET from ROHM Semiconductor, housed in an HSMT8 surface-mount package. It features a drain-source voltage (VDSS) of 100V and a continuous drain current (ID) of ±13A at Tc=25°C. The device exhibits a maximum static on-resistance (RDS(on)) of 57mΩ at VGS=10V and 4.5A. Total gate charge (Qg) is typically 6.7nC at VGS=10V. Power dissipation reaches 14W at Tc=25°C, with a junction temperature range of -55°C to +150°C. Thermal resistance from junction to case is 8.7°C/W.

FET, MOSFET Arrays Feature Summary

• Low on-resistance for efficient switching performance
• High power density within a small mold HSMT8 package
• Lead-free plating compliant with RoHS standards
• Halogen-free material composition

FET, MOSFET Arrays Applications

• General purpose switching applications
• Power management circuits requiring compact form factors

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering code HT8KE6TB1 against the official ROHM datasheet to ensure correct packaging and marking. Confirm that the application environment remains within standard operating conditions, as automotive or medical use requires prior consultation with the manufacturer. Ensure storage conditions adhere to humidity barrier bag requirements to maintain solderability.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel configuration is required in a minimal footprint. Evaluate thermal constraints carefully, as the HSMT8 package offers limited heat dissipation compared to larger packages. Verify that the 100V rating provides sufficient margin for the target circuit's peak voltage transients and that the gate drive voltage aligns with the low RDS(on) specifications.

FET, MOSFET Arrays Part Context

This part belongs to ROHM's HSMT8 series of dual MOSFETs, designed for high-density PCB layouts. The TB1 suffix indicates taping packaging with a reel size of 330mm and a quantity of 3000 pieces. It serves as a compact alternative to traditional SOP-8 packages while maintaining comparable electrical performance for general electronic equipment.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the 100V/13A dual N-channel specification and HSMT8 footprint. Verify pinout compatibility and thermal resistance values before substitution.