HTMN5130SSD-13

FET, MOSFET Arrays Overview

The HTMN5130SSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 55 V and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum static drain-source on-resistance (RDS(ON)) of 130 mΩ at VGS = 10 V and 200 mΩ at VGS = 4.5 V. Continuous drain current ratings are 2.86 A at TA = +25°C and 2.3 A at TA = +70°C. Total gate charge is 8.9 nC at VGS = 10 V. The component is housed in an SO-8 surface-mount package.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration designed for high efficiency power management applications
• Qualified to AEC-Q101 standards for automotive-grade reliability
• Totally lead-free, fully RoHS compliant, and halogen/antimony free construction

FET, MOSFET Arrays Applications

• DC-DC Converters
• Power Management Functions
• Backlighting

FET, MOSFET Arrays Procurement Notes

Verify the specific revision level of the datasheet DS36319 Rev. 4 - 3 when sourcing components. Confirm that the received parts match the marking information provided in the official documentation. Ensure compliance with the specified storage and handling requirements for moisture sensitivity level 1 devices during assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a 55 V dual N-channel MOSFET capable of operating up to 175°C junction temperature. Evaluate thermal resistance parameters against the expected ambient conditions and copper pad layout. Consider the RDS(ON) values at both 10 V and 4.5 V gate drive levels to ensure compatibility with the control circuitry logic levels.

FET, MOSFET Arrays Part Context

This part belongs to the HTMN series of dual N-channel MOSFETs from Diodes Incorporated. It utilizes an SO-8 case style with molded plastic green molding compound. The device is marked with 'e3' indicating tin finish annealed over a copper leadframe. The document explicitly states this part is not recommended for new design.

FET, MOSFET Arrays Replacement Considerations

The datasheet explicitly states there is no alternate part for the HTMN5130SSD. Designers should consult the manufacturer for updated recommendations or select a different component from the current portfolio suitable for new designs.

FET, MOSFET Arrays FAQ

What is the maximum junction temperature for the HTMN5130SSD?

The maximum operating and storage junction temperature range is -55°C to +175°C.

Is the HTMN5130SSD qualified for automotive applications?

Yes, the device is qualified to AEC-Q101 standards for high reliability.

What is the body diode reverse recovery time?

The body diode reverse recovery time (trr) is typically 30.8 ns at IF = 1.5A and dI/dt = 100A/μs.