HUF75321D3S

Description：MOSFET N-CH 55V 20A TO252AA
Series：UltraFET™
Mfr：onsemi
Package：Tube

SKU:485661af895a Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

HUF75321D3S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 55V 20A TO252AA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUF75321D3S

Description：MOSFET N-CH 55V 20A TO252AA
Series：UltraFET™
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：36mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 20 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：680 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：93W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for HUF75321D3S

HUF75321D3S

Single FETs, MOSFETs Overview

The HUF75321D3S is a 20A, 55V N-Channel UltraFET Power MOSFET manufactured using an advanced process technology that achieves low on-resistance per silicon area. It features a TO-252AA package and supports a junction temperature range of -55°C to 175°C. The device exhibits a maximum drain-to-source on-resistance of 0.036Ω at VGS=10V and ID=20A. Key electrical parameters include a gate threshold voltage of 2V to 4V, total gate charge of 36nC to 44nC, and a reverse recovery time of 59ns for the source-drain diode.

Single FETs, MOSFETs Feature Summary

Utilizes innovative UltraFET process technology for optimized performance
Capable of withstanding high energy in avalanche mode
Features very low reverse recovery time and stored charge
Includes temperature compensating PSPICE and SABER simulation models

Single FETs, MOSFETs Applications

Switching regulators
Motor drivers
Relay drivers
Low-voltage bus switches
Power management in portable products

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'S' corresponds to the TO-252AA package variant when placing orders. Confirm compatibility with ISO9000 and QS9000 quality systems if required by your manufacturing standards. Ensure all part numbers are entered completely during procurement to avoid selection errors between tape-and-reel and tube packaging options.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust avalanche capability and efficient power switching in compact form factors. Consider the thermal resistance characteristics and derating curves for high-temperature environments. Verify that the gate drive voltage meets the minimum requirements for optimal on-resistance performance under expected load conditions.

Single FETs, MOSFETs Part Context

This device belongs to the UltraFET family of power MOSFETs, originally developed as the TA75321. It represents a transition from Fairchild Semiconductor to onsemi product lines. The series is designed for applications prioritizing power efficiency and reliability in consumer and industrial electronics.