HUF75321S3S

Description：MOSFET N-CH 55V 35A D2PAK
Series：UltraFET™
Mfr：onsemi
Package：Tube

SKU:53519312f88c Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

HUF75321S3S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 55V 35A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUF75321S3S

Description：MOSFET N-CH 55V 35A D2PAK
Series：UltraFET™
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：34mOhm @ 35A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 20 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：680 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：93W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for HUF75321S3S

HUF75321S3S

Single FETs, MOSFETs Overview

The HUF75321S3S is a single N-Channel UltraFET power MOSFET manufactured using an innovative process technology designed to achieve the lowest possible on-resistance per silicon area. It features a TO-263AB (D2PAK) package and is rated for a drain-to-source voltage of 55V and a continuous drain current of 35A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.034 Ohms at VGS = 10V and ID = 35A, with a gate-to-source voltage limit of ±20V. It supports a junction temperature range from -55°C to +175°C and includes thermal impedance specifications for system design.

Single FETs, MOSFETs Feature Summary

Utilizes UltraFET process technology to minimize on-resistance per silicon area for high performance
Capable of withstanding high energy in avalanche mode
Exhibits very low reverse recovery time and stored charge in the body diode

Single FETs, MOSFETs Applications

Switching regulators
Motor drivers
Relay drivers
Low-voltage bus switches
Power management in portable and battery-operated products

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix requirements when purchasing. The datasheet indicates that adding the 'T' suffix to the base part number obtains the TO-263AB variant in tape and reel packaging. Ensure the component matches the required package style and configuration for your assembly process.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust power efficiency and high current handling capabilities within a 55V system. Consider the thermal resistance characteristics and the need for adequate heat sinking given the power dissipation ratings. Verify compatibility with standard gate drive voltages, as the device is optimized for VGS = 10V operation.

Single FETs, MOSFETs Part Context

This device belongs to the UltraFET family of power MOSFETs, formerly known as the developmental type TA75321. It is part of a series that includes variants like the HUF75321P3, which shares identical electrical specifications but utilizes a different physical package format. The product line emphasizes advanced silicon processing for superior switching and conduction performance.