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HUF75344S3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is 75A, 55V, 0.008 OHM, N-CHANNEL U. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for HUF75344S3
- Description：75A, 55V, 0.008 OHM, N-CHANNEL U
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：210 nC @ 20 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3200 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：155W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK (TO-262)
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for HUF75344S3
Single FETs, MOSFETs Overview
The HUF75344S3 is an N-channel power MOSFET manufactured by Intersil, utilizing the UltraFET process technology. It features a 55V drain-source voltage rating and supports a continuous drain current of 75A. The device exhibits a low on-resistance of 0.008 ohms, facilitating efficient power management. Packaged in TO-263AB (D2PAK), it operates within a temperature range of -55°C to +175°C with a power dissipation capacity of 285W. Key switching parameters include a typical turn-on delay of 13ns and a fall time of 57ns.
Single FETs, MOSFETs Feature Summary
- UltraFET process technology for enhanced performance
- High thermal stability with extended operating temperature range
- Low on-resistance for improved efficiency
- Robust switching characteristics suitable for high-frequency applications
Single FETs, MOSFETs Applications
- Voltage bus switches
- Power management systems
- Portable equipment power circuits
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer origin as Intersil or its successor entities like Renesas, given corporate acquisitions. Confirm the package type matches TO-263AB specifications. Check for ESD sensitivity handling requirements during procurement and storage. Ensure documentation references the correct datasheet version associated with the 75344 series.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high current handling at low voltage levels. The TO-263AB package offers suitable thermal performance for moderate power dissipation needs. Consider the 55V rating for compatibility with standard logic-level control signals. Evaluate thermal impedance requirements against the specific PCB layout constraints.
Single FETs, MOSFETs Part Context
This part belongs to the 75344 series of N-channel power MOSFETs. The series includes variants such as HUF75344G3 in TO-247 and HUF75344P3 in TO-220AB. All variants share similar electrical characteristics but differ in packaging and thermal resistance profiles. The S3 suffix typically denotes the tape and reel packaging option for surface mount assembly.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include HUF75344G3 and HUF75344P3 from the same family, provided the package footprint allows. Verify pinout compatibility between TO-263AB and alternative packages if mechanical changes are permitted.
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