HUF75842S3S

$2.35

Description：MOSFET N-CH 150V 43A D2PAK
Series：UltraFET™
Mfr：onsemi
Package：Tube

SKU:3e7b6e8557f9 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

HUF75842S3S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 150V 43A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUF75842S3S

Description：MOSFET N-CH 150V 43A D2PAK
Series：UltraFET™
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：42mOhm @ 43A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：175 nC @ 20 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2730 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：230W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for HUF75842S3S

HUF75842S3S

Single FETs, MOSFETs Overview

The HUF75842S3S is a single N-Channel UltraFET Power MOSFET manufactured by onsemi (formerly Fairchild Semiconductor). It features a TO-263AB (D2PAK) surface-mount package. Key electrical specifications include a drain-to-source voltage of 150 V, a continuous drain current of 43 A at 25°C case temperature, and a maximum drain-to-source on-resistance of 0.042 Ω at VGS = 10V. The device supports an operating junction temperature range from -55°C to +175°C with a power dissipation rating of 230 W.

Single FETs, MOSFETs Feature Summary

Ultra-low on-resistance for high efficiency
Enhanced switching performance
Temperature compensated simulation models

Single FETs, MOSFETs Applications

DC-DC converters
Motor control circuits
Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin as this component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific TO-263AB package variant matches the required PCB footprint. Ensure compliance with RoHS directives if applicable to the target assembly environment.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust 150V blocking capability and high current handling up to 43A. The low thermal resistance facilitates effective heat dissipation in compact designs. Consider the gate charge requirements when designing the driving circuitry to ensure optimal switching speeds.

Single FETs, MOSFETs Part Context

This part belongs to the UltraFET series of power MOSFETs designed for general-purpose power switching. It utilizes advanced trench technology to achieve low RDS(on) while maintaining high breakdown voltage capabilities. The TO-263AB package provides a balance between thermal performance and space efficiency for surface-mount applications.