HUF75939S3ST

$2.01

Description：N-CHANNEL POWER MOSFET
Series：UltraFET®
Mfr：Fairchild Semiconductor
Package：Bulk

SKU:3611e49e954d Category: Single FETs, MOSFETs Brand: Fairchild Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

HUF75939S3ST is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUF75939S3ST

Description：N-CHANNEL POWER MOSFET
Series：UltraFET®
Mfr：Fairchild Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：125mOhm @ 22A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：152 nC @ 20 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2200 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：180W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for HUF75939S3ST

HUF75939S3ST

Single FETs, MOSFETs Overview

The HUF75939S3ST is an N-Channel UltraFET Power MOSFET manufactured by Fairchild Semiconductor. It features a drain-to-source voltage rating of 200 V and a continuous drain current of 22 A at case temperature. The device exhibits a maximum on-resistance of 0.125 Ohm. Packaged in a surface-mount TO-263AB (D2PAK) housing, it is designed for high-efficiency power switching applications.

Single FETs, MOSFETs Feature Summary

Utilizes the UltraFET process technology to achieve low on-resistance per silicon area.
Capable of withstanding high energy in avalanche mode.
Exhibits very low reverse recovery time and stored charge in the built-in diode.

Single FETs, MOSFETs Applications

Switching regulators
Motor drivers
Power management in portable products

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm package integrity and pin alignment upon receipt. Review the official datasheet for absolute maximum ratings and thermal characteristics before integration. Ensure compliance with relevant environmental standards required for the specific end-use application.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust 200 V blocking capability with moderate current handling. The low on-resistance supports efficient power conversion in space-constrained surface-mount layouts. Evaluate thermal dissipation requirements carefully, as performance depends on case temperature conditions specified in the electrical characteristics table.

Single FETs, MOSFETs Part Context

This part belongs to the UltraFET family of N-Channel power MOSFETs from Fairchild Semiconductor. These devices are engineered for superior performance compared to standard MOSFETs, offering reduced conduction losses and improved switching speeds suitable for modern power electronics architectures.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible equivalents. Verify that any alternative part matches the 200 V rating, 22 A current capacity, and TO-263AB package dimensions to ensure mechanical and electrical compatibility without redesigning the PCB layout.