HUF76113T3ST

$0.57

Description：N-CHANNEL POWER MOSFET
Series：-
Mfr：Fairchild Semiconductor
Package：Bulk

SKU:1f3ab8430fa4 Category: Single FETs, MOSFETs Brand: Fairchild Semiconductor

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Product introduction

HUF76113T3ST is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUF76113T3ST

Description：N-CHANNEL POWER MOSFET
Series：-
Mfr：Fairchild Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：31mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：625 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-223-4
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for HUF76113T3ST

HUF76113T3ST

Single FETs, MOSFETs Overview

The HUF76113T3ST is a dual N-channel Power MOSFET manufactured by Fairchild Semiconductor using the UltraFET process. It features a SOIC-8 surface-mount package with a drain voltage rating of 30 V and a continuous drain current of 6 A. The device exhibits a maximum on-resistance of 32 mΩ, enabling efficient power switching. It operates within a temperature range of -55°C to +150°C and includes built-in protection against avalanche energy and reverse recovery issues.

Single FETs, MOSFETs Feature Summary

Utilizes UltraFET process technology for low on-resistance per silicon area
Capable of withstanding high energy in avalanche mode
Features very low reverse recovery time and stored charge
Designed for applications requiring high power efficiency

Single FETs, MOSFETs Applications

Switching regulators
Motor drivers
Relay drivers
Low-voltage bus switches
Power management in portable products

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to potential counterfeit risks. Confirm RoHS compliance status as historical data indicates non-compliance for some variants. Check for obsolescence notices or lifecycle changes from onsemi, which acquired Fairchild's semiconductor business. Ensure packaging specifications match design requirements before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring dual N-channel MOSFETs in compact SOIC-8 packages. Consider the 30 V breakdown voltage and 6 A current capability for low-voltage DC-DC conversion tasks. Evaluate thermal performance given the 2.5 W power dissipation limit. Compare on-resistance values against alternative devices to ensure optimal efficiency in space-constrained portable electronics.

Single FETs, MOSFETs Part Context

This part belongs to the HUF76 series of UltraFET Power MOSFETs, characterized by advanced silicon processing for superior performance. The series targets applications where size, weight, and power efficiency are critical constraints. Fairchild Semiconductor developed these components to meet the demands of modern portable and battery-operated devices requiring reliable switching capabilities.