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HUF76121P3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for HUF76121P3
- Description：N-CHANNEL POWER MOSFET
- Series：UltraFET™
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：21mOhm @ 47A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：850 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for HUF76121P3
Single FETs, MOSFETs Overview
The HUF76121P3 is an N-Channel UltraFET Power MOSFET manufactured by Fairchild Semiconductor. It features a logic-level gate structure designed for direct drive from standard logic families. The device is housed in a TO-220AB package, suitable for through-hole mounting applications requiring high current handling capabilities.
Single FETs, MOSFETs Feature Summary
- Logic-level gate architecture enabling direct interface with standard digital logic outputs without additional level shifting circuitry.
- UltraFET technology providing low on-resistance to minimize conduction losses and improve thermal efficiency.
- Robust avalanche energy rating supporting operation in inductive switching environments.
Single FETs, MOSFETs Applications
- DC motor control circuits
- Power switching modules
- Synchronous rectification
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer source code and date code against the specific lot requirements of your production line. Confirm that the component meets the RoHS directive standards applicable to your target market. Ensure the TO-220AB package dimensions align with your PCB footprint specifications before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a high-current N-Channel MOSFET with logic-level drive compatibility is required. Consider the thermal resistance characteristics of the TO-220AB package for heat dissipation needs. Evaluate the maximum drain-source voltage and continuous drain current ratings against the peak loads of the intended application to ensure adequate safety margins.
Single FETs, MOSFETs Part Context
This part belongs to the UltraFET family of power MOSFETs from Fairchild Semiconductor. These devices are engineered for high-efficiency power conversion and switching applications. The series is characterized by advanced cell technology that optimizes the trade-off between on-resistance and gate charge.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include the HUF76121S3ST variant, which offers the same electrical specifications in a surface-mount SuperSOT-8 package. Other compatible replacements within the same performance class may include parts from the HUF76xxx series with matching voltage and current ratings.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
