HUF76407D3ST

Single FETs, MOSFETs Overview

The HUF76407D3ST is an N-channel Power MOSFET manufactured by onsemi, housed in a TO-252AA (DPAK) surface-mount package. It features a drain-source breakdown voltage (Vds) of 60 V and a continuous drain current (Id) rating of 12 A. The device exhibits a maximum on-resistance (Rds(on)) of 0.077 ohms at a gate-source voltage (Vgs) of 10 V. The gate threshold voltage (Vgs(th)) is specified at 1 V. Maximum power dissipation (Pd) is 38 W, with an operating temperature range from -55 °C to +175 °C junction temperature.

Single FETs, MOSFETs Feature Summary

• N-channel silicon MOSFET technology for efficient switching applications
• Logic-level gate threshold voltage enabling direct drive from standard logic interfaces
• Low on-resistance characteristic optimized for conduction loss reduction
• High thermal stability supporting operation up to 175 °C junction temperature

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Motor control systems
• Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix D3ST against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications and exact electrical test conditions. Ensure the procurement source provides valid RoHS compliance documentation as indicated in product attributes. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V N-channel MOSFET with moderate current handling capability is required in a compact DPAK footprint. The low gate threshold voltage facilitates compatibility with 3.3 V or 5 V logic drivers. Evaluate thermal performance constraints carefully, as the 38 W power dissipation rating depends heavily on PCB copper area and ambient cooling conditions rather than standalone package limits.

Single FETs, MOSFETs Part Context

This device belongs to the HUF764xx series of high-performance MOSFETs from onsemi, formerly Fairchild Semiconductor. The series focuses on providing robust power switching solutions for industrial and consumer electronics. The TO-252AA package offers a balance between thermal performance and space efficiency, making it suitable for board-level power integration where leaded packages are impractical but higher current than SOT-23 is needed.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalent 60 V, 12 A N-channel MOSFETs in TO-252AA packages. Verify that alternative parts match the Rds(on) and Vgs(th) specifications to ensure circuit compatibility. No specific substitute part numbers are confirmed in the provided data.