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HUF76407DK8T is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 60V 8SOIC. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for HUF76407DK8T
- Description：MOSFET 2N-CH 60V 8SOIC
- Series：UltraFET™
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：90mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：330pF @ 25V
- Power - Max：2.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for HUF76407DK8T
FET, MOSFET Arrays Overview
The HUF76407DK8T is a dual N-channel logic level UltraFET power MOSFET in an SOP-8 package. It features a drain-to-source voltage (VDS) of 60 V and a gate-to-source voltage (VGS) rating of ±16 V. The device provides low on-resistance, with rDS(ON) maximums of 0.090 Ω at VGS = 10 V and 0.105 Ω at VGS = 5 V. Continuous drain current reaches 3.5 A at TA = 25°C (VGS = 5 V). Thermal resistance to ambient (RθJA) ranges from 50 °C/W to 228 °C/W depending on copper pad area. Operating junction temperature spans -55 °C to 150 °C.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration within a single SOP-8 package
- Logic-level operation enabling direct drive from standard logic voltages
- Ultra-low on-resistance optimized for high efficiency
- Temperature-compensated PSPICE and SABER simulation models
FET, MOSFET Arrays Applications
- DC-DC converter circuits
- AC-DC power supply designs
- Motor control applications
FET, MOSFET Arrays Procurement Notes
Verify the complete part number including the T suffix for tape and reel packaging. Confirm that the component originates from Fairchild Semiconductor or its successor entity, as manufacturing rights transitioned to onsemi. Ensure datasheet revision B specifications align with design requirements before finalizing procurement orders.
FET, MOSFET Arrays Selection Notes
Select this component when a compact dual N-channel solution is required for 60 V logic-level switching. Evaluate thermal performance based on specific PCB copper pad areas, as RθJA varies significantly with mounting geometry. Verify that the 16 V absolute maximum gate rating accommodates the system's drive voltage without exceeding limits.
FET, MOSFET Arrays Part Context
This device belongs to the UltraFET family developed by Fairchild Semiconductor. The product line emphasizes low on-resistance and small footprint solutions for power conversion. The SOP-8 package allows for surface-mount integration while housing two independent N-channel dies.
FET, MOSFET Arrays Replacement Considerations
HUF76407D3ST
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