HUF76423P3

Single FETs, MOSFETs Overview

The HUF76423P3 is a silicon N-channel enhancement mode MOSFET manufactured by onsemi. It is housed in a TO-220-3 through-hole package designed for high-current switching applications. The device features a drain-source breakdown voltage of 30 V and a continuous drain current rating of 75 A. Its low on-resistance is specified at 11 mΩ, facilitating efficient power handling with reduced conduction losses. The component supports a gate-source voltage range of ±20 V and operates within a temperature range of -40°C to +150°C, with a maximum power dissipation capability of 120 W.

Single FETs, MOSFETs Feature Summary

• Logic-level gate drive compatibility for direct interface with standard logic controllers
• Low on-resistance design optimized for minimizing conduction losses in high-current paths
• Robust thermal performance suitable for demanding industrial and automotive environments

Single FETs, MOSFETs Applications

• High-current DC-DC converter circuits
• Motor control systems requiring robust switching elements
• Power distribution units in industrial equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant against the official datasheet to ensure compatibility with your PCB footprint and thermal requirements. Confirm RoHS compliance status and material composition declarations via the manufacturer's compliance database before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits that require high current handling capabilities at low voltage levels. Ensure the thermal management solution can dissipate up to 120 W under worst-case operating conditions. Verify that the gate drive circuitry provides sufficient voltage swing to fully enhance the channel given the 11 mΩ resistance specification.

Single FETs, MOSFETs Part Context

This part belongs to the HUF76xxx series of power MOSFETs from onsemi, which are engineered for general-purpose power switching. The series utilizes advanced planar technology to achieve low on-resistance and fast switching speeds. These devices are commonly utilized in applications where efficiency and thermal stability are critical performance factors.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout configuration, voltage ratings, and thermal characteristics to guarantee functional equivalence without redesigning the host circuit.