HUF76429D3S

Description：MOSFET N-CH 60V 20A TO252AA
Series：UltraFET™
Mfr：onsemi
Package：Tube

SKU:56ffe57595d2 Category: Single FETs, MOSFETs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

HUF76429D3S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 20A TO252AA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUF76429D3S

Description：MOSFET N-CH 60V 20A TO252AA
Series：UltraFET™
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：23mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1480 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：110W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for HUF76429D3S

HUF76429D3S

Single FETs, MOSFETs Overview

The HUF76429D3S is a single N-Channel Logic Level UltraFET Power MOSFET manufactured by onsemi. It features a TO-252AA (DPAK) surface-mount package with a drain flange for thermal management. The device supports a continuous drain current of 20A at 25°C and withstands a drain-to-source voltage of 60V. Key electrical parameters include a maximum on-resistance of 0.027Ω at VGS=5V, a gate charge of 46nC, and a power dissipation rating of 110W. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Logic level operation enabling direct drive from standard logic voltages
Ultra-low on-resistance for high efficiency in switching applications
Integrated body diode with defined reverse recovery characteristics
Thermal resistance optimized for heat dissipation via the exposed drain pad

Single FETs, MOSFETs Applications

DC-DC converter circuits
Power amplifier stages
Motor control systems
Load switching applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status as indicated in official documentation. Check for obsolete status or lifecycle changes directly with the manufacturer. Ensure storage conditions meet specified humidity sensitivity levels prior to soldering.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction loss is required at 5V logic drive levels. Evaluate thermal performance based on the specific PCB copper area available for the drain pad. Consider the gate charge requirements against the driving circuit's capability to achieve desired switching speeds.

Single FETs, MOSFETs Part Context

This part belongs to the UltraFET series of power MOSFETs designed for general-purpose power switching. It utilizes silicon technology and is housed in a standard DPAK package variant. The product line emphasizes low on-resistance and robust avalanche capabilities for reliable operation in power electronics.