HUF76629D3S

Single FETs, MOSFETs Overview

The HUF76629D3S is a single N-Channel Logic Level UltraFET Power MOSFET manufactured by onsemi. It features a TO-252AA (DPAK) surface-mount package with a drain flange for thermal management. The device supports a continuous drain current of 20A at a case temperature of 25°C and withstands a drain-to-source voltage of 100V. Key electrical parameters include a maximum drain-to-source on-resistance of 0.054Ω at VGS=5V and 0.052Ω at VGS=10V, with a gate threshold voltage ranging from 1V to 3V. Total gate charge is typically 38nC at VGS=10V. The component operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Logic level operation enabling direct drive from standard logic voltages such as 5V or 4.5V.
• Ultra-low on-resistance characteristics optimized for high-efficiency power switching applications.
• Integrated body diode with defined reverse recovery time and charge specifications.
• Robust unclamped inductive switching (UIS) capability for handling inductive load transients.

Single FETs, MOSFETs Applications

• DC-DC converter circuits requiring low conduction losses.
• Motor control systems utilizing logic-level gate drivers.
• Power supply output stages for general regulation.
• High-frequency switching applications supported by fast turn-on and turn-off times.

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing; the 'S' denotes the TO-252AA package variant. Confirm availability status as distribution channels may list obsolete stock or alternative revisions. Ensure the procurement documentation matches the exact part number HUF76629D3S to avoid confusion with the tape-and-reel version (HUF76629D3ST) or the TO-251AA variant (HUF76629D3).

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 100V rating with a 20A continuous current capacity in a compact surface-mount footprint. Consider the thermal resistance of 1.36°C/W junction-to-case when designing heatsinking solutions. Verify that the gate driver can provide sufficient voltage swing to fully enhance the channel, given the specified on-resistance thresholds at 5V and 10V gate biases.

Single FETs, MOSFETs Part Context

This device belongs to the UltraFET family of power MOSFETs, characterized by advanced trench technology for reduced on-resistance. The HUF76629 series includes variants with different voltage ratings and packages, such as the TO-251AA (HUF76629D3). The datasheet indicates it was originally developed by Fairchild Semiconductor before being acquired by onsemi.

Single FETs, MOSFETs Replacement Considerations

Check for cross-reference equivalents within the same voltage and current class. Verify pinout compatibility between TO-252AA packages. Review thermal performance data to ensure substitute components meet the required junction-to-case thermal resistance limits for the intended application environment.