Single FETs, MOSFETs HUFA75307D3 product image

HUFA75307D3

$0.27
  • Description:MOSFET N-CH 55V 15A IPAK
  • Series:UltraFET™
  • Mfr:onsemi
  • Package:Tube

SKU:5a497b170b5d Category: Brand:

  
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HUFA75307D3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 55V 15A IPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUFA75307D3

  • Description:MOSFET N-CH 55V 15A IPAK
  • Series:UltraFET™
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:90mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20 nC @ 20 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):45W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:IPAK
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for HUFA75307D3

HUFA75307D3

Single FETs, MOSFETs Overview

The HUFA75307D3 is a single N-Channel UltraFET power MOSFET manufactured by onsemi, formerly Fairchild Semiconductor. It utilizes an advanced process to achieve low on-resistance per silicon area. The device features a TO-251AA (TO-252) package and supports through-hole mounting. Key electrical parameters include a drain-to-source voltage of 55 V, continuous drain current of 15 A, and a maximum drain-to-source on-resistance of 90 mΩ at VGS = 10 V. It operates within a temperature range of -55°C to +175°C with a power dissipation rating of 45 W.

Single FETs, MOSFETs Feature Summary

  • Manufactured using the UltraFET process for optimized on-resistance performance.
  • Capable of withstanding high energy in avalanche mode.
  • Exhibits very low reverse recovery time and stored charge in the body diode.

Single FETs, MOSFETs Applications

  • Switching regulators
  • Motor drivers
  • Relay drivers
  • Low-voltage bus switches

Single FETs, MOSFETs Procurement Notes

Verify component authenticity as this part was originally developed by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific ordering suffix matches the required package variant, as the datasheet distinguishes between TO-220AB, TO-251AA, and TO-252AA packages. Ensure compliance with automotive industry test conditions if applicable to the design environment.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust switching performance in low-voltage applications. The device is suitable for portable and battery-operated products where power efficiency is critical. Consider the thermal resistance characteristics when designing heat dissipation solutions, particularly regarding junction-to-case and junction-to-ambient constraints under varying duty cycles.

Single FETs, MOSFETs Part Context

This component belongs to the UltraFET family of power MOSFETs designed for high-efficiency switching. It serves as a successor to the developmental type TA75307. The product line includes variants with different packaging options, such as the P3 and D3S suffixes, allowing flexibility in board layout and thermal management strategies for various industrial and consumer electronics applications.

Single FETs, MOSFETs Replacement Considerations

HUFA75307P3

Single FETs, MOSFETs FAQ

Is simulation model data available for this component?

Yes, temperature-compensated PSPICE and SABER models are provided in the datasheet, along with SPICE and SABER thermal impedance models.

What is the maximum gate-to-source voltage rating?

The absolute maximum rating for gate-to-source voltage is ±20 V.

HUFA75307D3HUFA75307D3
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