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HUFA75307D3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 55V 15A IPAK. Review the specifications below when checking this part for your BOM.
The HUFA75307D3 is a single N-Channel UltraFET power MOSFET manufactured by onsemi, formerly Fairchild Semiconductor. It utilizes an advanced process to achieve low on-resistance per silicon area. The device features a TO-251AA (TO-252) package and supports through-hole mounting. Key electrical parameters include a drain-to-source voltage of 55 V, continuous drain current of 15 A, and a maximum drain-to-source on-resistance of 90 mΩ at VGS = 10 V. It operates within a temperature range of -55°C to +175°C with a power dissipation rating of 45 W.
Verify component authenticity as this part was originally developed by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific ordering suffix matches the required package variant, as the datasheet distinguishes between TO-220AB, TO-251AA, and TO-252AA packages. Ensure compliance with automotive industry test conditions if applicable to the design environment.
Select this component for designs requiring robust switching performance in low-voltage applications. The device is suitable for portable and battery-operated products where power efficiency is critical. Consider the thermal resistance characteristics when designing heat dissipation solutions, particularly regarding junction-to-case and junction-to-ambient constraints under varying duty cycles.
This component belongs to the UltraFET family of power MOSFETs designed for high-efficiency switching. It serves as a successor to the developmental type TA75307. The product line includes variants with different packaging options, such as the P3 and D3S suffixes, allowing flexibility in board layout and thermal management strategies for various industrial and consumer electronics applications.
HUFA75307P3
Yes, temperature-compensated PSPICE and SABER models are provided in the datasheet, along with SPICE and SABER thermal impedance models.
The absolute maximum rating for gate-to-source voltage is ±20 V.
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