Single FETs, MOSFETs HUFA75307P3 product image

HUFA75307P3

$0.22
  • Description:MOSFET N-CH 55V 15A TO220-3
  • Series:UltraFET™
  • Mfr:Fairchild Semiconductor
  • Package:Tube

SKU:0a87aa71c396 Category: Brand:

  
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HUFA75307P3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 55V 15A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUFA75307P3

  • Description:MOSFET N-CH 55V 15A TO220-3
  • Series:UltraFET™
  • Mfr:Fairchild Semiconductor
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:90mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20 nC @ 20 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):45W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for HUFA75307P3

HUFA75307P3

Single FETs, MOSFETs Overview

The Fairchild Semiconductor HUFA75307P3 is a single N-channel UltraFET power MOSFET housed in a TO-220-3 package. It features a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 15 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 90 mΩ at Vgs = 10 V. Key electrical parameters include a gate threshold voltage of 4 V at Id = 250 µA, a maximum gate-source voltage (Vgs) of ±20 V, and a total power dissipation of 45 W. The component operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

  • Utilizes the UltraFET process technology for low on-resistance per silicon area.
  • Capable of withstanding high energy in avalanche mode.
  • Features a built-in body diode with very low reverse recovery time and stored charge.

Single FETs, MOSFETs Applications

  • Switching regulators
  • Motor drivers
  • Relay drivers
  • Low-voltage bus switches

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer origin, as this part number may be associated with Fairchild Semiconductor or its successor, onsemi. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure the TO-220-3 through-hole package matches the target PCB footprint requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust N-channel switching at 55 V with moderate current handling up to 15 A. The 90 mΩ on-resistance offers a balance between conduction losses and cost. Consider the thermal management capabilities provided by the TO-220-3 package for heat dissipation in power management circuits.

Single FETs, MOSFETs Part Context

The HUFA75307P3 belongs to the UltraFET family of power MOSFETs designed for efficiency-critical applications. This series leverages advanced silicon processes to minimize resistance while maintaining high reliability. The component is intended for use in portable and battery-operated products where power efficiency is paramount.

Single FETs, MOSFETs Replacement Considerations

Check for equivalents such as HUF75307T3S or other 55 V, 15 A N-channel MOSFETs in compatible packages. Verify pinout compatibility and ensure that replacement devices meet or exceed the original specifications for voltage, current, and thermal performance.

Single FETs, MOSFETs FAQ

What is the maximum power dissipation of the HUFA75307P3?

The maximum power dissipation is 45 W.

Is the HUFA75307P3 available in a surface-mount package?

No, the HUFA75307P3 is specifically packaged in a TO-220-3 through-hole case.

HUFA75307P3HUFA75307P3
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